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1.发明授权公开(公告)号：US12114518B2
公开(公告)日：2024-10-08
申请号：US17511706
申请日：2021-10-27
发明人： Sung Woo Kim , Chan Su Kim , Tae Ho Kim , Kun Su Park , Eun Joo Jang , Jin A Kim , Tae Hyung Kim , Jeong Hee Lee
CPC分类号： H10K50/11 , H10K30/10 , H10K50/115 , H10K50/15 , H10K50/16 , H10K85/649
摘要： An electroluminescent device, a method of manufacturing the same, and a display device including the same. The electroluminescent device includes a first electrode and a second electrode facing each other; an emission layer disposed between the first electrode and the second electrode, the emission layer including light emitting particles; an electron transport layer disposed between the first electrode and the emission layer; and a hole transport layer disposed between the second electrode and the emission layer, wherein the electron transport layer includes inorganic oxide particles and a metal-organic compound, the metal-organic compound or a thermal decomposition product of the metal-organic compound being soluble a non-polar solvent.
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公开(公告)号：US11661550B2
公开(公告)日：2023-05-30
申请号：US17543197
申请日：2021-12-06
发明人： Sung Woo Kim , Jin A Kim , Tae Hyung Kim , Jeong Hee Lee , Eun Joo Jang
CPC分类号： C09K11/883 , C09K11/565 , H01L51/502
摘要： A quantum dot comprising a core comprising a first semiconductor nanocrystal comprising zinc, selenium, and optionally tellurium; and a shell disposed on the core and comprising a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, and comprising zinc and at least one of sulfur and selenium, wherein the shell comprises at least three branches extending from the core, wherein at least one of the branches has a length of greater than or equal to about 2 nm, the quantum dot emits blue light comprising a maximum emission peak at a wavelength of less than or equal to about 470 nm, a full width at half maximum (FWHM) of the maximum emission peak is less than about 35 nm, and the quantum dot does not comprise cadmium.
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公开(公告)号：US11566345B2
公开(公告)日：2023-01-31
申请号：US16281232
申请日：2019-02-21
发明人： Jin A Kim , Yuho Won , Sung Woo Kim , Tae Hyung Kim , Jeong Hee Lee , Eun Joo Jang
IPC分类号： B32B5/16 , B05D7/00 , B82Y20/00 , C30B29/48 , C01G9/08 , H01L51/50 , H01L33/28 , C09K11/02 , C09K11/56 , C09K11/88 , H01L33/06 , B82Y40/00
摘要： A semiconductor nanocrystal particle, a production method thereof, and a light emitting device including the same. The semiconductor nanocrystal particle includes a core including a first semiconductor nanocrystal, a first shell surrounding the core, the first shell including a second semiconductor nanocrystal including a different composition from the first semiconductor nanocrystal, a second shell surrounding the first shell, the second shell including a third semiconductor nanocrystal including a different composition from the second semiconductor nanocrystal, wherein the first semiconductor nanocrystal includes zinc and sulfur; wherein the third semiconductor nanocrystal includes zinc and sulfur; wherein an energy bandgap of the second semiconductor nanocrystal is less than an energy bandgap of the first semiconductor nanocrystal and less than an energy bandgap of the third semiconductor nanocrystal; and wherein the semiconductor nanocrystal particle does not include cadmium.
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公开(公告)号：US11563143B2
公开(公告)日：2023-01-24
申请号：US16998262
申请日：2020-08-20
发明人： Yong Seok Han , Sung Woo Kim , Jin A Kim , Tae Hyung Kim , Kun Su Park , Yuho Won , Jeong Hee Lee , Eun Joo Jang , Hyo Sook Jang
摘要： A quantum dot including a core that includes a first semiconductor nanocrystal including zinc and selenium, and optionally sulfur and/or tellurium, and a shell that includes a second semiconductor nanocrystal including zinc, and at least one of sulfur or selenium is disclosed. The quantum dot has an average particle diameter of greater than or equal to about 13 nm, an emission peak wavelength in a range of about 440 nm to about 470 nm, and a full width at half maximum (FWHM) of an emission wavelength of less than about 25 nm. A method for preparing the quantum dot, a quantum dot-polymer composite including the quantum dot, and an electronic device including the quantum dot is also disclosed.
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公开(公告)号：US11444242B2
公开(公告)日：2022-09-13
申请号：US16701293
申请日：2019-12-03
发明人： Kwanghee Kim , Heejae Lee , Oul Cho , Tae Hyung Kim , Eun Joo Jang
摘要： A resistive memory device including a first electrode and a second electrode facing each other and a variable resistance layer disposed between the first electrode and the second electrode, wherein the variable resistance layer includes cadmium-free quantum dots (Cd-free quantum dots) and at least a portion of the Cd-free quantum dots include a Cd-free quantum dot including a halide anion on a surface of the Cd-free quantum dot, a method of manufacturing the same and an electronic device.
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公开(公告)号：US11334311B2
公开(公告)日：2022-05-17
申请号：US17234434
申请日：2021-04-19
发明人： Hyunkyoung Kim , Woonghee Park , Saetbyeol Lee , Bongkyu Kim , Tae Hyung Kim , Hyung-Jun Ahn , Kwang-Yong Lee , Sang-Hun Lee
IPC分类号： G06F3/14 , G06F3/04817 , G06F3/0482 , G06F3/0484
摘要： An example method of an electronic device according to various embodiments of the present disclosure may include indicating that a first screen related to a first application operating in a background state is being displayed in an external electronic device, connected to the electronic device, based on data transmitted from the electronic device; and displaying an object floating on a second screen being displayed on the electronic device.
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公开(公告)号：US11138982B2
公开(公告)日：2021-10-05
申请号：US16875313
申请日：2020-05-15
发明人： Yoon Jung Choi , So Yeon Kim , Tae Hyung Kim
IPC分类号： G10L17/00 , G10L17/22 , G06F21/62 , G06F21/32 , H04M1/72454 , H04M1/67 , H04M1/72463
摘要： A method of controlling a terminal is provided. The method includes analyzing a sensed voice when a voice is sensed, recognizing a context based a result of the analysis, and performing a predetermined control operation based on the recognized context.
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公开(公告)号：US10983749B2
公开(公告)日：2021-04-20
申请号：US16486640
申请日：2018-02-14
发明人： Hyunkyoung Kim , Woonghee Park , Saetbyeol Lee , Bongkyu Kim , Tae Hyung Kim , Hyung-Jun Ahn , Kwang-Yong Lee , Sang-Hun Lee
IPC分类号： G06F3/14 , G06F3/0481 , G06F3/0482 , G06F3/0484
摘要： A method of an electronic device according to various embodiments of the present disclosure may comprise the operations of: indicating that a first screen related to a first application operating in a background state is being displayed in an external electronic device, connected to the electronic device, on the basis of data transmitted from the electronic device; and displaying an object floating on a second screen being displayed on the electronic device.
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公开(公告)号：US10954440B2
公开(公告)日：2021-03-23
申请号：US16298108
申请日：2019-03-11
发明人： Yuho Won , Sung Woo Kim , Jin A Kim , Jeong Hee Lee , Tae Hyung Kim , Eun Joo Jang
摘要： A quantum dot including: a core including a first semiconductor nanocrystal material including zinc, tellurium, and selenium; and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, selenium, and sulfur, wherein the quantum dot does not include cadmium, and in the quantum dot, a mole ratio of the sulfur with respect to the selenium is less than or equal to about 2.4:1. A production method of the quantum dot and an electronic device including the same are also disclosed.
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公开(公告)号：US10585228B2
公开(公告)日：2020-03-10
申请号：US15393632
申请日：2016-12-29
发明人： Tae Hyung Kim , Jihyun Min , Yongwook Kim , Eun Joo Jang
IPC分类号： G02F1/1335 , F21V8/00 , C09K11/70 , C09K11/88 , C09K11/66
摘要： An electronic device includes, a light source having a peak emission at a wavelength between about 440 nm to about 480 nm; and a photoconversion layer disposed on the light source, wherein the photoconversion layer includes a first quantum dot which emits red light and a second quantum dot which emits green light, wherein at least one of the first quantum dot and the second quantum dot has a perovskite crystal structure and includes a compound represented by Chemical Formula 1: AB′X3+α Chemical Formula 1 wherein A is a Group IA metal, NR4+, or a combination thereof, B′ is a Group IVA metal, X is a halogen, BF4−, or a combination thereof, and α is 0 to 3.
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