公开(公告)号：US20200220006A1

公开(公告)日：2020-07-09

申请号：US16816971

申请日：2020-03-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JUNG-GIL YANG ,  Beom-Jin Park ,  Seung-Min Song ,  Geum-Jong Bae ,  Dong-Il Bae

IPC: H01L29/78 ,  H01L29/775 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66 ,  H01L21/8234 ,  H01L21/762 ,  H01L21/308 ,  H01L29/06

Abstract: A semiconductor device includes channels, a gate structure, and a source/drain layer. The channels are disposed at a plurality of levels, respectively, and spaced apart from each other in a vertical direction on an upper surface of a substrate. The gate structure is disposed on the substrate, at least partially surrounds a surface of each of the channels, and extends in a first direction substantially parallel to the upper surface of the substrate. The source/drain layer is disposed at each of opposite sides of the gate structure in a second direction substantially parallel to the upper surface of the substrate and substantially perpendicular to the first direction and is connected to sidewalls of the channels. A length of the gate structure in the second direction changes along the first direction at a first height from the upper surface of the substrate in the vertical direction.

公开(公告)号：US11923456B2

公开(公告)日：2024-03-05

申请号：US17659571

申请日：2022-04-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Gil Yang ,  Beom-Jin Park ,  Seung-Min Song ,  Geum-Jong Bae ,  Dong-Il Bae

IPC: H01L29/78 ,  H01L21/308 ,  H01L21/762 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L29/785 ,  H01L21/3086 ,  H01L21/762 ,  H01L21/823431 ,  H01L29/0649 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/6681 ,  H01L29/775 ,  H01L29/78696

Abstract: A semiconductor device includes channels, a gate structure, and a source/drain layer. The channels are disposed at a plurality of levels, respectively, and spaced apart from each other in a vertical direction on an upper surface of a substrate. The gate structure is disposed on the substrate, at least partially surrounds a surface of each of the channels, and extends in a first direction substantially parallel to the upper surface of the substrate. The source/drain layer is disposed at each of opposite sides of the gate structure in a second direction substantially parallel to the upper surface of the substrate and substantially perpendicular to the first direction and is connected to sidewalls of the channels. A length of the gate structure in the second direction changes along the first direction at a first height from the upper surface of the substrate in the vertical direction.

公开(公告)号：US11309421B2

公开(公告)日：2022-04-19

申请号：US16816971

申请日：2020-03-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Gil Yang ,  Beom-Jin Park ,  Seung-Min Song ,  Geum-Jong Bae ,  Dong-Il Bae

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/66 ,  H01L21/308 ,  H01L21/762 ,  H01L21/8234 ,  H01L29/786 ,  H01L29/423 ,  H01L29/775

Abstract: A semiconductor device includes channels, a gate structure, and a source/drain layer. The channels are disposed at a plurality of levels, respectively, and spaced apart from each other in a vertical direction on an upper surface of a substrate. The gate structure is disposed on the substrate, at least partially surrounds a surface of each of the channels, and extends in a first direction substantially parallel to the upper surface of the substrate. The source/drain layer is disposed at each of opposite sides of the gate structure in a second direction substantially parallel to the upper surface of the substrate and substantially perpendicular to the first direction and is connected to sidewalls of the channels. A length of the gate structure in the second direction changes along the first direction at a first height from the upper surface of the substrate in the vertical direction.

公开(公告)号：US20190157444A1

公开(公告)日：2019-05-23

申请号：US16115114

申请日：2018-08-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Gil Yang ,  Beom-Jin Park ,  Seung-Min Song ,  Geum-Jong Bae ,  Dong-Il Bae

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/66 ,  H01L21/762 ,  H01L21/8234 ,  H01L21/308

Abstract: A semiconductor device includes channels, a gate structure, and a source/drain layer. The channels are disposed at a plurality of levels, respectively, and spaced apart from each other in a vertical direction on an upper surface of a substrate. The gate structure is disposed on the substrate, at least partially surrounds a surface of each of the channels, and extends in a first direction substantially parallel to the upper surface of the substrate. The source/drain layer is disposed at each of opposite sides of the gate structure in a second direction substantially parallel to the upper surface of the substrate and substantially perpendicular to the first direction and is connected to sidewalls of the channels. A length of the gate structure in the second direction changes along the first direction at a first height from the upper surface of the substrate in the vertical direction.