公开(公告)号：US09985202B2

公开(公告)日：2018-05-29

申请号：US15365977

申请日：2016-12-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeong-heon Park ,  Se-chung Oh ,  Byoung-jae Bae ,  Jong-chul Park

IPC: H01L21/00 ,  H01L43/12 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

CPC classification number: H01L43/12 ,  H01L27/222 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: A method of fabricating a memory device, the method including forming a first magnetization layer; forming a tunnel barrier layer on the first magnetization layer; forming a second magnetization layer on the tunnel barrier layer; forming a magnetic tunnel junction (MTJ) structure by patterning the first magnetization layer, the tunnel barrier layer, and the second magnetization layer; and forming a boron oxide in a sidewall of the MTJ structure by implanting boron.