公开(公告)号：US20190096479A1

公开(公告)日：2019-03-28

申请号：US15922967

申请日：2018-03-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： CHUNG-HO YU ,  DAE-SEOK BYEON ,  JIN-BAE BANG ,  CHEON-AN LEE

IPC: G11C11/56 ,  G11C16/24 ,  G11C16/26

CPC classification number: G11C11/5642 ,  G11C16/0483 ,  G11C16/24 ,  G11C16/26 ,  G11C16/32 ,  G11C2211/5642

Abstract: A nonvolatile memory device includes multi-level cells. A sensing method of the nonvolatile memory device includes: precharging a bit line and a sense-out node during a first precharge interval; identifying a first state of a selected memory cell, by developing the sense-out node during a first develop time and sensing a first voltage level of the sense-out node; precharging the sense-out node to a second sense-out precharge voltage; and identifying the first state of the selected memory cell from a second state adjacent thereto, by developing the sense-out node during a second develop time different from the first develop time and sensing a second voltage level of the sense-out node.