公开(公告)号：US20220077073A1

公开(公告)日：2022-03-10

申请号：US17230416

申请日：2021-04-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changjoon YOON ,  Sunme LIM ,  Kyeong-Yeol KWAK ,  Soojung KIM

IPC: H01L23/544 ,  G03F7/20 ,  H01L21/66 ,  H01L23/528

Abstract: Disclosed is a semiconductor device comprising a substrate, a first lower pattern group on the substrate and including a first key pattern and first lower test patterns horizontally spaced apart from the first key pattern, and a first upper pattern group on the first lower pattern group and including first pads horizontally spaced apart from each other and first upper test patterns between adjacent ones of the first pads. The first key pattern is configured to be used for a photography process associated with fabrication of the semiconductor device. The first pads are electrically connected to the first upper test patterns. One of the first pads vertically overlaps with the first key pattern.

公开(公告)号：US20240105717A1

公开(公告)日：2024-03-28

申请号：US18234987

申请日：2023-08-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sunme LIM ,  Changjoon YOON ,  Yeji LEE ,  Heejun CHO

IPC: H01L27/088 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775

CPC classification number: H01L27/088 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823481 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/775

Abstract: A semiconductor device may include a first nanosheet structure having a first width, a second nanosheet structure having a second width and a diffusion break pattern disposed between the first and second nanosheet structures in a first direction. A first epitaxial pattern is disposed between the first nanosheet structure and the diffusion break pattern and is in direct contact therewith. A second epitaxial pattern is disposed between the second nanosheet structure and the diffusion break pattern and is in direct contact therewith. At least one of imaginary first lines connecting a first contact point of an end portion between the diffusion break pattern and the first epitaxial pattern and a second contact point at an end portion between the diffusion break pattern and the second epitaxial pattern extends to have an angle less than about 30 degrees with respect to the first direction.