公开(公告)号：US09812557B2

公开(公告)日：2017-11-07

申请号：US15138234

申请日：2016-04-26

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Hyun-Kwan Yu ,  Dong-Suk Shin ,  Woon-Ki Shin ,  Cheol-Woo Park ,  Ryong Ha ,  Han-Jin Lim

IPC分类号： H01L21/28 ,  H01L29/66 ,  H01L21/3213 ,  H01L21/02 ,  H01L29/78

CPC分类号： H01L29/66795 ,  H01L21/02068 ,  H01L21/32134 ,  H01L29/66545 ,  H01L29/7848

摘要： A method of manufacturing a semiconductor device includes forming an active fin extending longitudinally in a first direction along a surface of a substrate, forming a field insulating layer on the substrate, the field insulating layer covering a part of the active fin, forming a dummy gate electrode on the field insulating layer and the active fin, the dummy gate electrode extending in a second direction different from the first direction, forming a spacer on the sides of the dummy gate electrode, and removing the dummy gate electrode by a wet etching process that includes rinsing the dummy gate electrode intermittently during an etching away of the dummy gate electrode.