公开(公告)号：US20160019975A1

公开(公告)日：2016-01-21

申请号：US14742726

申请日：2015-06-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JAE-DUK YU ,  DONG-KU KANG ,  DAE-YEAL LEE

IPC: G11C16/34 ,  G11C16/26 ,  G11C16/10

CPC classification number: G11C11/5628 ,  G11C5/143 ,  G11C16/10 ,  G11C16/3454 ,  G11C16/3459

Abstract: A semiconductor memory device is configured to perform a first verification operation by setting an initial voltage level of a verification voltage to a first voltage level and boosting the verification voltage during a first period. The semiconductor memory device includes a memory cell array that stores program data, a sensor generating sensing data, and a condition determination unit comparing the program data and the sensing data. A control logic unit includes a verification operation controller configured to selectively perform, based on a result of comparison of the program data and the sensing data, a first verification control operation for controlling a second verification operation by setting the initial voltage level to a second voltage level and boosting the verification voltage during a second period, and a second verification control operation for controlling the second verification operation by setting the initial voltage level to the first voltage level and boosting the verification voltage during the first period.

Abstract translation: 半导体存储器件被配置为通过将验证电压的初始电压电平设置为第一电压电平并在第一时段期间提高验证电压来执行第一验证操作。 半导体存储器件包括存储程序数据的存储单元阵列，产生检测数据的传感器和比较程序数据和检测数据的条件确定单元。 控制逻辑单元包括验证操作控制器，被配置为基于程序数据和感测数据的比较结果选择性地执行用于通过将初始电压电平设置为第二电压来控制第二验证操作的第一验证控制操作 并且在第二时段期间增强验证电压，以及第二验证控制操作，用于通过将初始电压电平设置为第一电压电平来控制第二验证操作，并在第一时段期间升高验证电压。