公开(公告)号：US20240038634A1

公开(公告)日：2024-02-01

申请号：US18336477

申请日：2023-06-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JINKYU KIM ,  YUNSUK NAM ,  GUKHEE KIM ,  JUNBEOM PARK ,  JAEHYUN AHN ,  DARONG OH ,  DONGICK LEE

IPC: H01L23/48 ,  H10B10/00 ,  H01L29/423 ,  H01L29/06 ,  H01L29/786 ,  H01L29/775 ,  H10B10/10

CPC classification number: H01L23/481 ,  H10B10/125 ,  H01L29/42392 ,  H01L29/0673 ,  H01L29/78696 ,  H01L29/775 ,  H10B10/10

Abstract: A semiconductor device, includes: a substrate having a first region and a second region; a first device on the substrate, in the first region; a second device on the substrate, in the second region; a front side interconnection structure including a plurality of interconnection layers electrically connected to the first device and the second device, on a front side of the substrate; and a back side buried interconnection structure adjacently to a back side of the substrate opposing the front side. The back side buried interconnection structure includes a back side buried insulating layer in a trench recessed from a back side of the substrate toward the front side of the substrate, and a back side buried conductive layer in the back side buried insulating layer. The back side buried interconnection structure is located in the first region or the second region.