公开(公告)号：US20240038634A1

公开(公告)日：2024-02-01

申请号：US18336477

申请日：2023-06-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JINKYU KIM ,  YUNSUK NAM ,  GUKHEE KIM ,  JUNBEOM PARK ,  JAEHYUN AHN ,  DARONG OH ,  DONGICK LEE

IPC: H01L23/48 ,  H10B10/00 ,  H01L29/423 ,  H01L29/06 ,  H01L29/786 ,  H01L29/775 ,  H10B10/10

CPC classification number: H01L23/481 ,  H10B10/125 ,  H01L29/42392 ,  H01L29/0673 ,  H01L29/78696 ,  H01L29/775 ,  H10B10/10

Abstract: A semiconductor device, includes: a substrate having a first region and a second region; a first device on the substrate, in the first region; a second device on the substrate, in the second region; a front side interconnection structure including a plurality of interconnection layers electrically connected to the first device and the second device, on a front side of the substrate; and a back side buried interconnection structure adjacently to a back side of the substrate opposing the front side. The back side buried interconnection structure includes a back side buried insulating layer in a trench recessed from a back side of the substrate toward the front side of the substrate, and a back side buried conductive layer in the back side buried insulating layer. The back side buried interconnection structure is located in the first region or the second region.

公开(公告)号：US20250089297A1

公开(公告)日：2025-03-13

申请号：US18621413

申请日：2024-03-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JEEWOONG KIM ,  SUNGMOON LEE ,  YUNSUK NAM ,  KEUN HWI CHO

IPC: H01L29/417 ,  H01L21/285 ,  H01L23/528 ,  H01L29/06 ,  H01L29/08 ,  H01L29/40 ,  H01L29/423 ,  H01L29/45 ,  H01L29/66 ,  H01L29/775

Abstract: A semiconductor device according to embodiment includes: a base insulation layer having a first surface and a second surface facing each other with a thickness therebetween; a channel layer on the first surface of the base insulation layer; a first source/drain pattern and a second source/drain pattern on the first surface of the base insulation layer and arranged in a first direction with the channel layer therebetween; a gate structure, that extends in a second direction crossing the first direction on the first surface of the base insulation layer, and surrounds the channel layer; a first silicide layer on a side wall of a recess pattern that penetrates the first source/drain pattern in a third direction that is perpendicular to the first direction and the second direction; and an interlayer insulation layer that is disposed in the recess pattern.