公开(公告)号：US20220070992A1

公开(公告)日：2022-03-03

申请号：US17242022

申请日：2021-04-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SUNGHO JANG ,  YOONJAE KIM ,  HYUCK SHIN ,  DONGHYUB LEE ,  KUL INN

IPC: H05G2/00 ,  H01S3/223 ,  G03F7/20

Abstract: A method of manufacturing a semiconductor includes generating plasma in an amplifying tube using gas as a gain medium; detecting a state of the plasma generated in the amplifying tube; determining a virtual laser gain based on the detected state of the plasma; controlling the state of the plasma such that the virtual laser gain is within a target range; and manufacturing the semiconductor device including performing an exposure process on a substrate using a laser beam output from the amplifying tube adjusted to have the virtual laser gain within the target range.