公开(公告)号：US20170301591A1

公开(公告)日：2017-10-19

申请号：US15635188

申请日：2017-06-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： SANG-YOUNG KIM ,  KYUNG-SOO RHO ,  HO-JEONG MOON ,  HYUCK SHIN ,  SUN-NYEONG JUNG

IPC: H01L21/66 ,  H01L25/065 ,  H01L23/00 ,  H01L23/31 ,  G01N23/04

CPC classification number: H01L22/12 ,  G01N23/04 ,  G21K1/10 ,  H01L23/3114 ,  H01L24/48 ,  H01L25/0657 ,  H01L2224/48091 ,  H01L2224/48153 ,  H01L2224/48227 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/15184 ,  H01L2224/45099

Abstract: An X-ray source is disposed and a detector is disposed adjacent to the X-ray source. A test specimen holder is disposed between the X-ray source and the detector. A filter is disposed between the X-ray source and the test specimen holder. The filter has a plate-shaped semiconductor, a granular semiconductor, or a combination thereof.

公开(公告)号：US20220070992A1

公开(公告)日：2022-03-03

申请号：US17242022

申请日：2021-04-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SUNGHO JANG ,  YOONJAE KIM ,  HYUCK SHIN ,  DONGHYUB LEE ,  KUL INN

IPC: H05G2/00 ,  H01S3/223 ,  G03F7/20

Abstract: A method of manufacturing a semiconductor includes generating plasma in an amplifying tube using gas as a gain medium; detecting a state of the plasma generated in the amplifying tube; determining a virtual laser gain based on the detected state of the plasma; controlling the state of the plasma such that the virtual laser gain is within a target range; and manufacturing the semiconductor device including performing an exposure process on a substrate using a laser beam output from the amplifying tube adjusted to have the virtual laser gain within the target range.