公开(公告)号：US20170317079A1

公开(公告)日：2017-11-02

申请号：US15413466

申请日：2017-01-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YOONJAE KIM ,  CHEOL KIM ,  YONG-HOON SON ,  JIN-HYUK YOO ,  WOOJIN JUNG

IPC: H01L27/088 ,  H01L21/306 ,  H01L29/66 ,  H01L29/423 ,  H01L29/165 ,  H01L29/10 ,  H01L29/08 ,  H01L29/06 ,  H01L27/02 ,  H01L21/8234 ,  H01L21/311 ,  H01L29/78

Abstract: A semiconductor device includes a substrate having an active pattern, a conductive pattern crossing the active pattern, a spacer structure on at least one side surface of the conductive pattern, and a capping structure on the conductive pattern. The capping structure includes a first capping pattern and a second capping pattern. The second capping pattern is disposed on a top surface of the first capping pattern and a top surface of the spacer structure.

公开(公告)号：US20220070992A1

公开(公告)日：2022-03-03

申请号：US17242022

申请日：2021-04-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SUNGHO JANG ,  YOONJAE KIM ,  HYUCK SHIN ,  DONGHYUB LEE ,  KUL INN

IPC: H05G2/00 ,  H01S3/223 ,  G03F7/20

Abstract: A method of manufacturing a semiconductor includes generating plasma in an amplifying tube using gas as a gain medium; detecting a state of the plasma generated in the amplifying tube; determining a virtual laser gain based on the detected state of the plasma; controlling the state of the plasma such that the virtual laser gain is within a target range; and manufacturing the semiconductor device including performing an exposure process on a substrate using a laser beam output from the amplifying tube adjusted to have the virtual laser gain within the target range.

公开(公告)号：US20200119009A1

公开(公告)日：2020-04-16

申请号：US16716384

申请日：2019-12-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YOONJAE KIM ,  CHEOL KIM ,  YONG-HOON SON ,  JIN-HYUK YOO ,  WOOJIN JUNG

IPC: H01L27/088 ,  H01L29/78 ,  H01L29/66 ,  H01L29/423 ,  H01L29/10 ,  H01L29/08 ,  H01L29/06 ,  H01L27/02 ,  H01L21/8234 ,  H01L21/311 ,  H01L21/306 ,  H01L21/768 ,  H01L23/485

Abstract: A semiconductor device includes a substrate having an active pattern, a conductive pattern crossing the active pattern, a spacer structure on at least one side surface of the conductive pattern, and a capping structure on the conductive pattern. The capping structure includes a first capping pattern and a second capping pattern. The second capping pattern is disposed on a top surface of the first capping pattern and a top surface of the spacer structure.