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1.发明申请公开(公告)号：US20190323893A1
公开(公告)日：2019-10-24
申请号：US16157682
申请日：2018-10-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： SE JIN OH , TAE KYUN KANG , YU SIN KIM , JAE IK KIM , CHAN BIN MO , DOUG YONG SUNG , SEUNG BIN AHN , KUL INN , YUN KWANG JEON
Abstract: A semiconductor substrate measuring apparatus includes a light source unit generating irradiation light including light in a first wavelength band and light in a second wavelength band. An optical unit irradiates the irradiation light on a measurement object and condenses reflected light. A light splitting unit splits the reflected light, condensed in the optical unit, into a first optical path and a second optical path. A first detecting unit is disposed on the first optical path and detects first interference light in the first wavelength band in the reflected light. A second detecting unit is disposed on the second optical path and detects second interference light in the second wavelength band in the reflected light. A controlling unit calculates at least one of a surface shape or a thickness of the measurement object. The controlling unit calculates a temperature of the measurement object.
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公开(公告)号：US20220070992A1
公开(公告)日：2022-03-03
申请号：US17242022
申请日：2021-04-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： SUNGHO JANG , YOONJAE KIM , HYUCK SHIN , DONGHYUB LEE , KUL INN
Abstract: A method of manufacturing a semiconductor includes generating plasma in an amplifying tube using gas as a gain medium; detecting a state of the plasma generated in the amplifying tube; determining a virtual laser gain based on the detected state of the plasma; controlling the state of the plasma such that the virtual laser gain is within a target range; and manufacturing the semiconductor device including performing an exposure process on a substrate using a laser beam output from the amplifying tube adjusted to have the virtual laser gain within the target range.
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