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公开(公告)号：US20230400992A1
公开(公告)日：2023-12-14
申请号：US18101232
申请日：2023-01-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kyungduk LEE , Youn-Soo CHEON , Daehyeon JO
IPC: G06F3/06
CPC classification number: G06F3/0625 , G06F3/0659 , G06F3/0673 , G06F3/0634
Abstract: Provided is a method for operating a memory device including performing a first setting operation on a first operation, reading map data based on the first setting operation, and performing a second setting operation on a second operation.
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