公开(公告)号：US12002890B2

公开(公告)日：2024-06-04

申请号：US17585284

申请日：2022-01-26

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jaehyun Yoo ,  Kyuok Lee ,  Uihui Kwon ,  Junhyeok Kim ,  Yongwoo Jeon ,  Dawon Jeong ,  Jaehyok Ko

IPC分类号： H01L29/86 ,  H01L29/06 ,  H01L29/40 ,  H01L29/861

CPC分类号： H01L29/861 ,  H01L29/0634 ,  H01L29/404 ,  H01L29/0649

摘要： A semiconductor protection device includes: an N-type epitaxial layer, a device isolation layer disposed in the N-type epitaxial layer, an N-type drift region disposed below the device isolation layer, an N-type well disposed in the N-type drift region, first and second P-type drift regions, respectively disposed to be in contact with the device isolation layer, and spaced apart from the N-type drift region, first and second P-type doped regions, respectively disposed in the first and second P-type drift regions, first and second N-type floating wells, respectively disposed in the first and second P-type drift regions to be spaced apart from the first and second P-type doped regions, and disposed to be in contact with the device isolation layer, and first and second contact layer, respectively disposed to cover the first and second N-type floating well, to be in contact with the device isolation layer.