公开(公告)号：US20240006411A1

公开(公告)日：2024-01-04

申请号：US18318587

申请日：2023-05-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Taeyong Kwon ,  Yoonjoong Kim ,  Seungmin Kim ,  Dogeon Lee

IPC: H01L27/088 ,  H01L29/06 ,  H01L29/10 ,  H01L29/423 ,  H01L29/775 ,  H01L21/8234 ,  H01L29/66

CPC classification number: H01L27/088 ,  H01L29/0673 ,  H01L29/1033 ,  H01L29/42392 ,  H01L29/775 ,  H01L21/823412 ,  H01L29/66439

Abstract: A semiconductor device may include a plurality of first channel structures on a substrate, a plurality of second channel structures on the substrate, a first impurity region structure between the first channel structures, a second impurity region structure between second channel structures, a third impurity region structure between the first and second channel structures, and a plurality of gate structures disposed between the first to third impurity region structures, respectively.
Each of the first channel structure may have a first width, and each of the second channel structure may have a second width less than the first width. The first impurity region structure may have a first volume, and the second impurity region structure may have a second volume smaller than the first volume. The third impurity region structure may have a third volume smaller than the first volume and greater than the second volume.