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公开(公告)号：US20200152276A1
公开(公告)日：2020-05-14
申请号：US16744763
申请日：2020-01-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Dong Jin SHIN , Ji Su KIM , Dae Seok BYEON , Ji Sang LEE , Jun Jin KONG , Eun Chu OH
Abstract: A non-volatile memory device including: a page buffer configured to latch a plurality of page data constituting one bit page of a plurality of bit pages, and a control logic configured to compare results of a plurality of read operations performed in response to a high-priority read signal set to select one of a plurality of read signals included in the high-priority read signal set as a high-priority read signal, and determine a low-priority read signal corresponding to the high-priority read signal, wherein the high-priority read signal set is for reading high-priority page data, and the low-priority read signal is for reading low-priority page data.
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公开(公告)号：US20220172786A1
公开(公告)日：2022-06-02
申请号：US17675085
申请日：2022-02-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Dong Jin SHIN , Ji Su KIM , Dae Seok BYEON , Ji Sang LEE , Jun Jin KONG , Eun Chu OH
Abstract: A storage device including, a plurality of non-volatile memories configured to include a memory cell region including at least one first metal pad; and a peripheral circuit region including at least one second metal pad and vertically connected to the memory cell region by the at least one first metal pad and the at least one second metal pad, and a controller connected to the plurality of non-volatile memories through a plurality of channels and configured to control the plurality of non-volatile memories, wherein the controller selects one of a first read operation mode and a second read operation mode and transfers a read command corresponding to the selected read operation mode to the plurality of non-volatile memories, wherein one sensing operation is performed to identify one program state among program sates in the first read operation mode, and wherein at least two sensing operations are performed to identify the one program state among the program states in the second read operation mode.
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公开(公告)号：US20210005271A1
公开(公告)日：2021-01-07
申请号：US17029265
申请日：2020-09-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Dong Jin SHIN , Ji Su KIM , Dae Seok BYEON , Ji Sang LEE , Jun Jin KONG , Eun Chu OH
Abstract: A storage device including, a plurality of non-volatile memories configured to include a memory cell region including at least one first metal pad; and a peripheral circuit region including at least one second metal pad and vertically connected to the memory cell region by the at least one first metal pad and the at least one second metal pad, and a controller connected to the plurality of non-volatile memories through a plurality of channels and configured to control the plurality of non-volatile memories, wherein the controller selects one of a first read operation mode and a second read operation mode and transfers a read command corresponding to the selected read operation mode to the plurality of non-volatile memories, wherein one sensing operation is performed to identify one program state among program sates in the first read operation mode, and wherein at least two sensing operations are performed to identify the one program state among the program states in the second read operation mode.
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公开(公告)号：US20210158877A1
公开(公告)日：2021-05-27
申请号：US17168613
申请日：2021-02-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Dong Jin SHIN , Ji Su KIM , Dae Seok BYEON , Ji Sang LEE , Jun Jin KONG , Eun Chu OH
Abstract: A non-volatile memory device including: a page buffer configured to latch a plurality of page data constituting one bit page of a plurality of bit pages, and a control logic configured to compare results of a plurality of read operations performed in response to a high-priority read signal set to select one of a plurality of read signals included in the high-priority read signal set as a high-priority read signal, and determine a low-priority read signal corresponding to the high-priority read signal, wherein the high-priority read signal set is for reading high-priority page data, and the low-priority read signal is for reading low-priority page data.
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