公开(公告)号：US20150093867A1

公开(公告)日：2015-04-02

申请号：US14291047

申请日：2014-05-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Kyu LEE

IPC: H01L21/8234

CPC classification number: H01L21/823462

Abstract: A method for fabricating a semiconductor device includes preparing a substrate in which a first active region and a second active region are defined by a device isolation region, forming a channel region in the first active region and the second active region, respectively, forming a gate insulating layer on the first active region and a gate insulating layer on the second active region, a thickness of the gate insulating layer on the first active region being different from a thickness of the gate insulating layer on the second active region, and forming a first interface layer between the substrate and the gate insulating layer on the first active region and a second interface layer between the substrate and the gate insulating layer on the second active region.

Abstract translation: 一种制造半导体器件的方法包括制备其中第一有源区和第二有源区由器件隔离区限定的衬底，分别在第一有源区和第二有源区中形成沟道区，形成栅极 第一有源区上的绝缘层和第二有源区上的栅极绝缘层，第一有源区上的栅极绝缘层的厚度与第二有源区上的栅极绝缘层的厚度不同，并且形成第一有源区 在第一有源区上的衬底和栅极绝缘层之间的界面层和在第二有源区上的衬底和栅极绝缘层之间的第二界面层。

公开(公告)号：US20190148632A1

公开(公告)日：2019-05-16

申请号：US16122056

申请日：2018-09-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Min LEE ,  Ju-Hyun KIM ,  Jung-Hwan PARK ,  Se-Chung OH ,  Dong-Kyu LEE ,  Kyung-Il HONG

IPC: H01L43/12 ,  H01L43/08 ,  H01L43/10 ,  H01L43/02 ,  H01L27/22

Abstract: In a method of manufacturing a variable resistance memory device, an MTJ structure layer is formed on a substrate. The MTJ structure layer is etched in an etching chamber to form an MTJ structure. The substrate having the MTJ structure thereon is transferred to a deposition chamber through a transfer chamber. A protection layer covering a sidewall of the MTJ structure is formed in the deposition chamber. The etching chamber, the transfer chamber, and the deposition chamber are kept in a high vacuum state equal to or more than about 10−8 Torr.

公开(公告)号：US20180150073A1

公开(公告)日：2018-05-31

申请号：US15825836

申请日：2017-11-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Kyu LEE ,  Bo-Ram NAMGOONG ,  Ja-Min GOO

IPC: G05D1/00 ,  B64C39/02 ,  B64D45/00

CPC classification number: G05D1/0038 ,  B64C39/024 ,  B64C2201/027 ,  B64C2201/127 ,  B64C2201/146 ,  B64D45/00 ,  G05D1/0033 ,  G06F3/017 ,  G06T7/70 ,  H04L67/125 ,  H04N5/2328 ,  H04N7/185

Abstract: An unmanned aerial vehicle (UAV) and a method for controlling the flight of the UAV are provided. The UAV provides a motion feedback corresponding to a user command received and a method for controlling the flight of the UAV. The UAV further provides a magnitude of motion feedback that is varied depending on the distance and/or direction between the user and the UAV and a method for controlling the flight of the UAV.