公开(公告)号：US20160099155A1

公开(公告)日：2016-04-07

申请号：US14840114

申请日：2015-08-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SEJUN PARK ,  DOHYUNG KIM ,  JAIHYUNG WON ,  SANGHO ROH ,  EUNSOL SHIN ,  SEUNG MOO LEE ,  GYUWAN CHOI

IPC: H01L21/308 ,  H01L29/66 ,  H01L21/762 ,  C23C16/50 ,  C23C16/26 ,  C23C14/06 ,  C23C16/30 ,  C23C14/22 ,  H01L21/311 ,  H01L21/768

CPC classification number: H01L21/3081 ,  C23C16/26 ,  C23C16/56 ,  H01L21/02115 ,  H01L21/02266 ,  H01L21/02274 ,  H01L21/31144 ,  H01L21/762 ,  H01L21/76224 ,  H01L27/10814 ,  H01L27/10852 ,  H01L27/10855 ,  H01L27/10888 ,  H01L29/4236

Abstract: A method of forming a hard mask layer on a substrate includes forming an amorphous carbon layer using nitrous oxide (N2O). A source of carbon and the nitrous oxide (N2O) are introduced to the substrate under a plasma ambient of an inert gas. The amorphous carbon layer has a nitrogen content ranging from about 0.05 at % to about 30 at % and an oxygen content ranging from about 0.05 at % to about 10 at %. In forming a semiconductor device, the hard mask layer is patterned, and a target layer beneath the hard mask layer is etched using the patterned hard mask layer as an etch mask.

Abstract translation: 在基板上形成硬掩模层的方法包括使用一氧化二氮（N2O）形成无定形碳层。 在惰性气体的等离子体环境下将碳源和一氧化二氮（N 2 O）源引入衬底。 无定形碳层的氮含量范围为约0.05at％至约30at％，氧含量为约0.05at％至约10at％。 在形成半导体器件时，硬掩模层被图案化，并且使用图案化的硬掩模层作为蚀刻掩模来蚀刻硬掩模层下面的目标层。