公开(公告)号：US09941135B2

公开(公告)日：2018-04-10

申请号：US14840114

申请日：2015-08-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sejun Park ,  Dohyung Kim ,  Jaihyung Won ,  Sangho Roh ,  Eunsol Shin ,  Seung Moo Lee ,  Gyuwan Choi

IPC: H01L21/308 ,  H01L21/311 ,  H01L21/762 ,  C23C16/26 ,  C23C16/56 ,  H01L21/02 ,  H01L29/423 ,  H01L27/108

CPC classification number: H01L21/3081 ,  C23C16/26 ,  C23C16/56 ,  H01L21/02115 ,  H01L21/02266 ,  H01L21/02274 ,  H01L21/31144 ,  H01L21/762 ,  H01L21/76224 ,  H01L27/10814 ,  H01L27/10852 ,  H01L27/10855 ,  H01L27/10888 ,  H01L29/4236

Abstract: A method of forming a hard mask layer on a substrate includes forming an amorphous carbon layer using nitrous oxide (N2O). A source of carbon and the nitrous oxide (N2O) are introduced to the substrate under a plasma ambient of an inert gas. The amorphous carbon layer has a nitrogen content ranging from about 0.05 at % to about 30 at % and an oxygen content ranging from about 0.05 at % to about 10 at %. In forming a semiconductor device, the hard mask layer is patterned, and a target layer beneath the hard mask layer is etched using the patterned hard mask layer as an etch mask.