公开(公告)号：US20240096960A1

公开(公告)日：2024-03-21

申请号：US18239248

申请日：2023-08-29

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Seunghyun SONG ,  Minsuk Kim ,  Pilkwang Kim ,  Takeshi Okagaki ,  Geunmyeong Kim ,  Ahyoung kim ,  Yoonsuk Kim

IPC分类号： H01L29/08 ,  H01L23/528 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

CPC分类号： H01L29/0847 ,  H01L23/5286 ,  H01L27/092 ,  H01L29/0653 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/78696

摘要： An integrated circuit device includes a back side interconnection structure extending in a first horizontal direction. An active substrate includes a fin-type active area extending in the first horizontal direction on the back side interconnection structure. A metal silicide film is between the back side interconnection structure and the active substrate. A plurality of gate structures extends in a second horizontal direction perpendicular to the first horizontal direction on the active substrate. A first source/drain area and a second source/drain area are spaced apart from each other in the first horizontal direction with the plurality of gate structures therebetween on the active substrate. The first source/drain area directly contacts the active substrate. The second source/drain area is spaced apart from the active substrate and insulated from the active substrate.