公开(公告)号：US20230411161A1

公开(公告)日：2023-12-21

申请号：US18196098

申请日：2023-05-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minsik KIM ,  Gwanhyoung LEE ,  Sukhoon KIM ,  Yongjun SHIN

IPC: H01L21/3065 ,  H01L29/20 ,  H01L29/423 ,  H01L21/768 ,  H01L21/311 ,  H01L21/02

CPC classification number: H01L21/3065 ,  H01L29/2003 ,  H01L29/42364 ,  H01L21/02107 ,  H01L21/76897 ,  H01L21/31116 ,  H01L21/76829

Abstract: In a method, an electrode layer and an insulation layer are alternately and repeatedly stacked on a substrate. A first insulation layer is etched through a first dry etching process using an etching gas including fluorine to form an opening exposing a first electrode layer. The first electrode layer exposed by the opening is partially removed through an RIE process using oxygen and/or hydrogen plasma to enlarge the opening so that a second insulation layer is exposed. The second insulation layer exposed by the opening is etched through a second dry etching process using an etching gas including fluorine to enlarge the opening so that a second electrode layer is exposed. A contact plug is formed in the enlarged opening.