公开(公告)号：US20140075135A1

公开(公告)日：2014-03-13

申请号：US13966585

申请日：2013-08-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HYOJIN CHOI ,  CHULWOO PARK ,  UKSONG KANG ,  HAKSOO YU

IPC: G06F12/00

CPC classification number: G06F12/00 ,  G11C7/1006 ,  G11C11/4076

Abstract: A semiconductor memory device performs a modified read operation or a modified write operation. The semiconductor memory device includes a memory cell array, a read circuit, and a write circuit. The semiconductor memory device further includes an operation unit performing an operation on read data obtained by the read circuit according to operation assignment information applied through an address line to reduce memory access time when entering a modified read mode. In addition, the semiconductor memory device may optionally manage a normal read mode and the modified read mode and allow operation result data output from the operation unit to be written by the write circuit in the modified read mode.

Abstract translation: 半导体存储器件执行修改的读取操作或修改的写入操作。 半导体存储器件包括存储单元阵列，读取电路和写入电路。 半导体存储器件还包括操作单元，根据通过地址线施加的操作分配信息，对由读取电路获得的读取数据执行操作，以减少进入修改的读取模式时的存储器访问时间。 此外，半导体存储器件可以可选地管理正常读取模式和修改读取模式，并且允许由操作单元输出的操作结果数据由修改读取模式下的写入电路写入。

公开(公告)号：US20150199234A1

公开(公告)日：2015-07-16

申请号：US14595856

申请日：2015-01-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HYOJIN CHOI ,  SU-A KIM ,  HAK-SOO YU ,  SEONG-YOUNG SEO ,  MU-JIN SEO

IPC: G06F11/10

CPC classification number: G06F11/1048 ,  G11C29/42 ,  G11C29/44 ,  G11C29/4401 ,  G11C29/52 ,  G11C2029/0409 ,  G11C2029/0411

Abstract: A method of operating a memory device includes: checking for errors in data read from a first address of a memory cell array of the memory device; counting the number of errors that occurred in the data read from the first address; receiving a first command for data read from the first address; determining whether the number of errors that occurred in the data read from the first address is greater than or equal to a first value; and mapping the first address to a second address, if the number of errors that occurred in the data read from the first address is greater than or equal to the first value.

Abstract translation: 操作存储器件的方法包括：检查从存储器件的存储单元阵列的第一地址读取的数据中的错误; 对从第一个地址读取的数据中发生的错误数进行计数; 接收从第一地址读取数据的第一命令; 确定在从所述第一地址读取的数据中发生的错误的数量是否大于或等于第一值; 并且如果从第一地址读取的数据中发生的错误的数目大于或等于第一个值，则将第一地址映射到第二地址。