公开(公告)号：US20160064056A1

公开(公告)日：2016-03-03

申请号：US14798164

申请日：2015-07-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SU-A KIM ,  Dae-Sun KIM ,  Dae-Jeong KIM ,  Sung-Min RYU ,  Kwang-II PARK ,  Chul-Woo PARK ,  Young-Soo SOHN ,  Jae-Youn YOUN

IPC: G11C8/08 ,  G11C7/02

CPC classification number: G11C8/08 ,  G11C5/025 ,  G11C7/02 ,  G11C7/1006 ,  G11C7/18 ,  G11C8/12 ,  G11C11/4074 ,  G11C11/4085 ,  G11C11/4097

Abstract: A semiconductor memory device includes a memory cell array, sub word-line drivers and power selection switches. The memory cell array includes memory cell rows coupled to word lines. The sub word line drivers are coupled to the word lines. The power selection switches are coupled to the sub word-line drivers. Each power selection switch controls a deactivation voltage level of a first word-line activated from the word-lines and an off-voltage level of a second word line adjacent to the first word line so that the deactivation voltage level and the off-voltage level have at least one of a ground voltage, a first negative voltage and a second negative voltage. The ground voltage, the first negative voltage and the second negative voltage have different voltage levels from each other.

Abstract translation: 半导体存储器件包括存储单元阵列，子字线驱动器和功率选择开关。 存储单元阵列包括耦合到字线的存储单元行。 子字线驱动器耦合到字线。 电源选择开关耦合到子字线驱动器。 每个电源选择开关控制从字线激活的第一字线的去激活电压电平和与第一字线相邻的第二字线的截止电压电平，使得去激活电压电平和截止电压电平 具有接地电压，第一负电压和第二负电压中的至少一个。 接地电压，第一负电压和第二负电压彼此具有不同的电压电平。

公开(公告)号：US20150199234A1

公开(公告)日：2015-07-16

申请号：US14595856

申请日：2015-01-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HYOJIN CHOI ,  SU-A KIM ,  HAK-SOO YU ,  SEONG-YOUNG SEO ,  MU-JIN SEO

IPC: G06F11/10

CPC classification number: G06F11/1048 ,  G11C29/42 ,  G11C29/44 ,  G11C29/4401 ,  G11C29/52 ,  G11C2029/0409 ,  G11C2029/0411

Abstract: A method of operating a memory device includes: checking for errors in data read from a first address of a memory cell array of the memory device; counting the number of errors that occurred in the data read from the first address; receiving a first command for data read from the first address; determining whether the number of errors that occurred in the data read from the first address is greater than or equal to a first value; and mapping the first address to a second address, if the number of errors that occurred in the data read from the first address is greater than or equal to the first value.

Abstract translation: 操作存储器件的方法包括：检查从存储器件的存储单元阵列的第一地址读取的数据中的错误; 对从第一个地址读取的数据中发生的错误数进行计数; 接收从第一地址读取数据的第一命令; 确定在从所述第一地址读取的数据中发生的错误的数量是否大于或等于第一值; 并且如果从第一地址读取的数据中发生的错误的数目大于或等于第一个值，则将第一地址映射到第二地址。