公开(公告)号：US20230402382A1

公开(公告)日：2023-12-14

申请号：US18113715

申请日：2023-02-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin Kyu KIM ,  Yun Suk NAM ,  Kyoung Woo LEE ,  Ho-Jun KIM ,  Da Rong OH ,  Sung Moon LEE ,  Hag Ju CHO ,  Seung Min CHA

IPC: H01L23/528 ,  H01L29/06 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786 ,  H01L29/423

CPC classification number: H01L23/5286 ,  H01L29/0673 ,  H01L29/66545 ,  H01L29/775 ,  H01L29/78696 ,  H01L29/66439 ,  H01L29/42392

Abstract: A semiconductor device includes: a base substrate; a first interlayer insulating layer disposed on the base substrate; a power rail disposed inside the first interlayer insulating layer; an active pattern extended in a first horizontal direction and disposed on the first interlayer insulating layer; a gate electrode extended in a second horizontal direction different from the first horizontal direction and disposed on the active pattern; a gate cut extended in the first horizontal direction and disposed on the power rail, wherein the gate cut separates the gate electrode; and a power rail via disposed inside the gate cut, wherein the power rail via is overlapped by the power rail.