公开(公告)号：US20160372359A1

公开(公告)日：2016-12-22

申请号：US15065916

申请日：2016-03-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myung-ho Kong ,  Jeong-hee Park ,  Taek-jung Kim ,  Han-young Kim ,  Keon-seok Seo ,  Jong-myeong Lee ,  Hee-sook Park

IPC: H01L21/768 ,  H01L21/28

CPC classification number: H01L21/743 ,  H01L21/76897 ,  H01L27/10876 ,  H01L27/10885 ,  H01L27/10894 ,  H01L29/4236 ,  H01L29/78

Abstract: A method of fabricating a semiconductor device includes forming a doped polysilicon layer on a substrate, forming a barrier layer on the doped polysilicon layer, forming an oxidized barrier layer by oxidizing a surface of the barrier layer, and forming a metal layer on the oxidized barrier layer.

Abstract translation: 制造半导体器件的方法包括在衬底上形成掺杂多晶硅层，在掺杂多晶硅层上形成阻挡层，通过氧化势垒层表面形成氧化阻挡层，并在氧化势垒上形成金属层 层。

公开(公告)号：US10373831B2

公开(公告)日：2019-08-06

申请号：US15651068

申请日：2017-07-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji-won Yu ,  Hyun-suk Lee ,  Ji-woon Park ,  Gi-hee Cho ,  Hee-sook Park ,  Woong-hee Sohn

IPC: C23C16/455 ,  H01L21/205 ,  H01L21/54 ,  H01L21/67 ,  H01L21/677 ,  C23C16/04 ,  C23C16/44

Abstract: A method of manufacturing a semiconductor device, the method including supplying a first reactant to inside a processing chamber into which a substrate has been introduced; controlling a flow of a first purge gas and storing the first purge gas, of which flow has been controlled, in a first storage for a given time period; supplying the first purge gas from the first storage to the inside of the processing chamber after supplying the first reactant; and supplying a second reactant to the inside of the processing chamber after supplying the first purge gas.

公开(公告)号：US09875925B2

公开(公告)日：2018-01-23

申请号：US15065916

申请日：2016-03-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myung-ho Kong ,  Jeong-hee Park ,  Taek-jung Kim ,  Han-young Kim ,  Keon-seok Seo ,  Jong-myeong Lee ,  Hee-sook Park

IPC: H01L21/74 ,  H01L29/423 ,  H01L29/78 ,  H01L21/768

CPC classification number: H01L21/743 ,  H01L21/76897 ,  H01L27/10876 ,  H01L27/10885 ,  H01L27/10894 ,  H01L29/4236 ,  H01L29/78

Abstract: A method of fabricating a semiconductor device includes forming a doped polysilicon layer on a substrate, forming a barrier layer on the doped polysilicon layer, forming an oxidized barrier layer by oxidizing a surface of the barrier layer, and forming a metal layer on the oxidized barrier layer.