公开(公告)号：US12009387B2

公开(公告)日：2024-06-11

申请号：US17323433

申请日：2021-05-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-goo Kang ,  Hyun-suk Lee ,  Gi-hee Cho

IPC: H10B12/00 ,  H01L49/02

CPC classification number: H01L28/75 ,  H01L28/60 ,  H01L28/87 ,  H01L28/88 ,  H01L28/90 ,  H10B12/0335 ,  H10B12/31

Abstract: An integrated circuit device includes a conductive region on a substrate and a lower electrode structure including a main electrode part spaced apart from the conductive region and a bridge electrode part between the main electrode part and the conductive region. A dielectric layer contacts an outer sidewall of the main electrode part. To manufacture the integrated circuit device, a preliminary bridge electrode layer is formed in a hole of a mold pattern on the substrate, and the main electrode part is formed on the preliminary bridge electrode layer in the hole. The mold pattern is removed to expose a sidewall of the preliminary bridge electrode layer, and a portion of the preliminary electrode part is removed to form the bridge electrode part. The dielectric layer is formed to contact the outer sidewall of the main electrode part.

公开(公告)号：US20130042098A1

公开(公告)日：2013-02-14

申请号：US13650752

申请日：2012-10-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kun-hoon BAIK ,  Ji-sub Park ,  Joung-hoon Choo ,  Hyun-suk Lee

IPC: G06F9/24 ,  G06F9/44 ,  G06F9/00

CPC classification number: G06F9/4401 ,  G06F9/00 ,  G06F9/24 ,  G06F9/44 ,  G06F9/4403 ,  G06F9/4406 ,  G06F9/4418 ,  G06F9/442 ,  G06F9/445

Abstract: A method of generating a boot image for fast booting an image forming apparatus. In the method, a boot image is generated to contain information regarding a system state after processes that are not used to execute an operating system and at least one application are terminated. Then, the image forming apparatus is fast booted using the boot image.

Abstract translation: 一种生成用于快速启动图像形成装置的引导图像的方法。 在该方法中，生成引导映像以包含关于在不用于执行操作系统的处理之后的系统状态的信息，并且终止至少一个应用。 然后，使用启动图像快速启动图像形成装置。

公开(公告)号：US11670673B2

公开(公告)日：2023-06-06

申请号：US17147542

申请日：2021-01-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun-suk Lee ,  Ji-won Yu ,  Ji-woon Park

IPC: H01L49/02 ,  H01L27/108 ,  H01L27/10

CPC classification number: H01L28/75 ,  H01L27/101 ,  H01L27/10805 ,  H01L27/10808 ,  H01L27/10811 ,  H01L27/10814 ,  H01L27/10847 ,  H01L27/10852 ,  H01L27/10855

Abstract: A semiconductor device includes a lower electrode structure, an upper electrode structure, and a dielectric layer between the lower and upper electrode structures and on side surfaces and an upper surface of the lower electrode structure. The lower electrode structure includes a first lower electrode pattern having a cylindrical shape, a barrier layer on the first lower electrode pattern, and a second lower electrode pattern in a space defined by the barrier layer.

公开(公告)号：US11031460B2

公开(公告)日：2021-06-08

申请号：US16555210

申请日：2019-08-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-goo Kang ,  Hyun-suk Lee ,  Gi-hee Cho

IPC: H01L49/02 ,  H01L27/108

Abstract: An integrated circuit device includes a conductive region on a substrate and a lower electrode structure including a main electrode part spaced apart from the conductive region and a bridge electrode part between the main electrode part and the conductive region. A dielectric layer contacts an outer sidewall of the main electrode part. To manufacture the integrated circuit device, a preliminary bridge electrode layer is formed in a hole of a mold pattern on the substrate, and the main electrode part is formed on the preliminary bridge electrode layer in the hole. The mold pattern is removed to expose a sidewall of the preliminary bridge electrode layer, and a portion of the preliminary electrode part is removed to form the bridge electrode part. The dielectric layer is formed to contact the outer sidewall of the main electrode part.

公开(公告)号：US10903308B2

公开(公告)日：2021-01-26

申请号：US16508695

申请日：2019-07-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun-suk Lee ,  Ji-won Yu ,  Ji-woon Park

IPC: H01L49/02 ,  H01L27/108 ,  H01L27/10

Abstract: A semiconductor device includes a lower electrode structure, an upper electrode structure, and a dielectric layer between the lower and upper electrode structures and on side surfaces and an upper surface of the lower electrode structure. The lower electrode structure includes a first lower electrode pattern having a cylindrical shape, a barrier layer on the first lower electrode pattern, and a second lower electrode pattern in a space defined by the barrier layer.

公开(公告)号：US10373831B2

公开(公告)日：2019-08-06

申请号：US15651068

申请日：2017-07-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji-won Yu ,  Hyun-suk Lee ,  Ji-woon Park ,  Gi-hee Cho ,  Hee-sook Park ,  Woong-hee Sohn

IPC: C23C16/455 ,  H01L21/205 ,  H01L21/54 ,  H01L21/67 ,  H01L21/677 ,  C23C16/04 ,  C23C16/44

Abstract: A method of manufacturing a semiconductor device, the method including supplying a first reactant to inside a processing chamber into which a substrate has been introduced; controlling a flow of a first purge gas and storing the first purge gas, of which flow has been controlled, in a first storage for a given time period; supplying the first purge gas from the first storage to the inside of the processing chamber after supplying the first reactant; and supplying a second reactant to the inside of the processing chamber after supplying the first purge gas.

公开(公告)号：US11978765B2

公开(公告)日：2024-05-07

申请号：US17323433

申请日：2021-05-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-goo Kang ,  Hyun-suk Lee ,  Gi-hee Cho

IPC: H10B12/00 ,  H01L49/02

CPC classification number: H01L28/75 ,  H01L28/60 ,  H01L28/87 ,  H01L28/88 ,  H01L28/90 ,  H10B12/0335 ,  H10B12/31

Abstract: An integrated circuit device includes a conductive region on a substrate and a lower electrode structure including a main electrode part spaced apart from the conductive region and a bridge electrode part between the main electrode part and the conductive region. A dielectric layer contacts an outer sidewall of the main electrode part. To manufacture the integrated circuit device, a preliminary bridge electrode layer is formed in a hole of a mold pattern on the substrate, and the main electrode part is formed on the preliminary bridge electrode layer in the hole. The mold pattern is removed to expose a sidewall of the preliminary bridge electrode layer, and a portion of the preliminary electrode part is removed to form the bridge electrode part. The dielectric layer is formed to contact the outer sidewall of the main electrode part.

公开(公告)号：US20200266265A1

公开(公告)日：2020-08-20

申请号：US16555210

申请日：2019-08-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-goo Kang ,  Hyun-suk Lee ,  Gi-hee Cho

IPC: H01L49/02 ,  H01L27/108

Abstract: An integrated circuit device includes a conductive region on a substrate and a lower electrode structure including a main electrode part spaced apart from the conductive region and a bridge electrode part between the main electrode part and the conductive region. A dielectric layer contacts an outer sidewall of the main electrode part. To manufacture the integrated circuit device, a preliminary bridge electrode layer is formed in a hole of a mold pattern on the substrate, and the main electrode part is formed on the preliminary bridge electrode layer in the hole. The mold pattern is removed to expose a sidewall of the preliminary bridge electrode layer, and a portion of the preliminary electrode part is removed to form the bridge electrode part. The dielectric layer is formed to contact the outer sidewall of the main electrode part.

公开(公告)号：US10355073B2

公开(公告)日：2019-07-16

申请号：US15448683

申请日：2017-03-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun-suk Lee ,  Ji-won Yu ,  Ji-woon Park

IPC: H01L49/02 ,  H01L23/535 ,  H01L27/108

Abstract: A semiconductor device includes a lower electrode structure, an upper electrode structure, and a dielectric layer between the lower and upper electrode structures and on side surfaces and an upper surface of the lower electrode structure. The lower electrode structure includes a first lower electrode pattern having a cylindrical shape, a barrier layer on the first lower electrode pattern, and a second lower electrode pattern in a space defined by the barrier layer.

公开(公告)号：US20130036300A1

公开(公告)日：2013-02-07

申请号：US13650727

申请日：2012-10-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kun-hoon BAIK ,  Ji-sub Park ,  Joung-hoon Choo ,  Hyun-suk Lee

IPC: G06F9/00

CPC classification number: G06F11/1441 ,  G06F9/4401 ,  G06F11/1417

Abstract: A method of fixing an error of a boot image for fast booting an image forming apparatus. In the method, if a boot image stored in the image forming apparatus has an error, the boot image is deleted, and the error is fixed by replacing the boot image with a backup of the boot image or generating a new boot image.

Abstract translation: 一种固定引导图像的错误以快速启动图像形成装置的方法。 在该方法中，如果存储在图像形成装置中的引导图像具有错误，则启动图像被删除，并且通过用启动图像的备份替换启动图像或生成新的启动图像来修复引导图像而修复错误。