公开(公告)号：US20130159617A1

公开(公告)日：2013-06-20

申请号：US13676610

申请日：2012-11-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hak Soo Yu ,  Joo Sun Choi ,  Hong Sun Hwang

IPC: G06F12/00

CPC classification number: G06F12/00 ,  G06F13/16 ,  G06F13/1668 ,  G11C11/406

Abstract: A memory system that includes a memory device and a memory controller. The memory device includes a plurality of memory cells, and a first storage unit configured to store information about a weak cell from among the plurality of memory cells. The memory controller is configured to transmit an operation command signal to the memory device, and control an operation of the memory device by using the information about the weak cell provided from the first storage unit. If the operation command signal is related to an operation to be performed using a first of the memory cells and the first memory cell is the weak cell, the memory device is configured to transmit the information about the weak cell to the memory controller.

Abstract translation: 一种包括存储器件和存储器控制器的存储器系统。 存储装置包括多个存储单元，第一存储单元被配置为存储关于来自多个存储单元之中的弱单元的信息。 存储器控制器被配置为向存储器件发送操作命令信号，并且通过使用关于从第一存储单元提供的弱小区的信息来控制存储器件的操作。 如果操作命令信号与要使用第一存储器单元执行的操作有关，并且第一存储器单元是弱单元，则存储器件被配置为将关于弱单元的信息发送到存储器控制器。

公开(公告)号：US09335951B2

公开(公告)日：2016-05-10

申请号：US14013275

申请日：2013-08-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Pil Son ,  Chul Woo Park ,  Hak Soo Yu ,  Hong Sun Hwang

IPC: G06F3/00 ,  G06F3/06 ,  G11C7/00 ,  G11C11/4076 ,  G06F13/16

CPC classification number: G06F3/061 ,  G06F3/0604 ,  G06F3/0659 ,  G06F3/0676 ,  G06F3/068 ,  G06F13/1642 ,  G11C7/00 ,  G11C7/1048 ,  G11C11/4076 ,  Y02D10/14

Abstract: A memory system includes a memory device and a memory controller. The memory device includes a plurality of memory cells. The memory controller is configured to continuously perform a plurality of write commands on the memory device between an active command and a precharge command. In the memory system, when after a first write operation having a last write command of the plurality of write commands is performed and then the precharge command is issued, the last write command is issued for a second write operation after the precharge command. The first write operation and the second write operation write a same data to memory cells of plurality of memory cells having a same address.

Abstract translation: 存储器系统包括存储器件和存储器控制器。 存储装置包括多个存储单元。 存储器控制器被配置为在活动命令和预充电命令之间在存储器设备上连续地执行多个写入命令。 在存储器系统中，当执行了具有多个写入命令的最后写入命令的第一次写入操作之后，然后执行预充电命令时，在预充电命令之后发出最后一个写入命令用于第二次写入操作。 第一写入操作和第二写入操作将相同的数据写入具有相同地址的多个存储单元的存储单元。

公开(公告)号：US08935467B2

公开(公告)日：2015-01-13

申请号：US13676610

申请日：2012-11-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hak Soo Yu ,  Joo Sun Choi ,  Hong Sun Hwang

IPC: G06F13/00 ,  G06F12/00 ,  G11C11/406 ,  G06F13/16

CPC classification number: G06F12/00 ,  G06F13/16 ,  G06F13/1668 ,  G11C11/406

Abstract: A memory system that includes a memory device and a memory controller. The memory device includes a plurality of memory cells, and a first storage unit configured to store information about a weak cell from among the plurality of memory cells. The memory controller is configured to transmit an operation command signal to the memory device, and control an operation of the memory device by using the information about the weak cell provided from the first storage unit. If the operation command signal is related to an operation to be performed using a first of the memory cells and the first memory cell is the weak cell, the memory device is configured to transmit the information about the weak cell to the memory controller.

Abstract translation: 一种包括存储器件和存储器控制器的存储器系统。 存储装置包括多个存储单元，第一存储单元被配置为存储关于来自多个存储单元之中的弱单元的信息。 存储器控制器被配置为向存储器件发送操作命令信号，并且通过使用关于从第一存储单元提供的弱小区的信息来控制存储器件的操作。 如果操作命令信号与要使用第一存储器单元执行的操作有关，并且第一存储器单元是弱单元，则存储器件被配置为将关于弱单元的信息发送到存储器控制器。