公开(公告)号：US12225311B2

公开(公告)日：2025-02-11

申请号：US18482233

申请日：2023-10-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Munhwan Kim ,  Youngsun Oh ,  Jongyoon Shin ,  Honghyun Jeon ,  Hana Choi

IPC: H04N25/766 ,  H01L27/146 ,  H04N25/11 ,  H04N25/75 ,  H04N25/778 ,  H04N25/79

Abstract: An image sensor and a method of operating the same are provided. The image sensor includes a semiconductor substrate of a first conductivity type; a photoelectric conversion region provided in the semiconductor substrate and doped to have a second conductivity type; a first floating diffusion region provided to receive photocharges accumulated in the photoelectric conversion region; a transfer gate electrode disposed between and connected to the first floating diffusion region and the photoelectric conversion region; a dual conversion gain transistor disposed between and connected to the first floating diffusion region and a second floating diffusion region; and a reset transistor disposed between and connected to the second floating diffusion region and a pixel power voltage region, wherein a channel region of the reset transistor has a potential gradient increasing in a direction from the second floating diffusion region toward the pixel power voltage region.

公开(公告)号：US11812175B2

公开(公告)日：2023-11-07

申请号：US17673390

申请日：2022-02-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Munhwan Kim ,  Youngsun Oh ,  Jongyoon Shin ,  Honghyun Jeon ,  Hana Choi

IPC: H04N25/766 ,  H01L27/146 ,  H04N25/11 ,  H04N25/75 ,  H04N25/79 ,  H04N25/778

CPC classification number: H04N25/766 ,  H01L27/1463 ,  H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14645 ,  H04N25/11 ,  H04N25/75 ,  H04N25/778 ,  H04N25/79

Abstract: An image sensor and a method of operating the same are provided. The image sensor includes a semiconductor substrate of a first conductivity type; a photoelectric conversion region provided in the semiconductor substrate and doped to have a second conductivity type; a first floating diffusion region provided to receive photocharges accumulated in the photoelectric conversion region; a transfer gate electrode disposed between and connected to the first floating diffusion region and the photoelectric conversion region; a dual conversion gain transistor disposed between and connected to the first floating diffusion region and a second floating diffusion region; and a reset transistor disposed between and connected to the second floating diffusion region and a pixel power voltage region, wherein a channel region of the reset transistor has a potential gradient increasing in a direction from the second floating diffusion region toward the pixel power voltage region.

公开(公告)号：US20220360731A1

公开(公告)日：2022-11-10

申请号：US17673390

申请日：2022-02-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Munhwan Kim ,  Youngsun Oh ,  Jongyoon Shin ,  Honghyun Jeon ,  Hana Choi

IPC: H04N5/374 ,  H01L27/146 ,  H04N5/378 ,  H04N5/369 ,  H04N9/04 ,  H04N5/3745

Abstract: An image sensor and a method of operating the same are provided. The image sensor includes a semiconductor substrate of a first conductivity type; a photoelectric conversion region provided in the semiconductor substrate and doped to have a second conductivity type; a first floating diffusion region provided to receive photocharges accumulated in the photoelectric conversion region; a transfer gate electrode disposed between and connected to the first floating diffusion region and the photoelectric conversion region; a dual conversion gain transistor disposed between and connected to the first floating diffusion region and a second floating diffusion region; and a reset transistor disposed between and connected to the second floating diffusion region and a pixel power voltage region, wherein a channel region of the reset transistor has a potential gradient increasing in a direction from the second floating diffusion region toward the pixel power voltage region.