利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

182 条记录 (耗时 0.022 秒)

    Imaging device and electronic device
    1.
    发明授权
    Imaging device and electronic device 有权

    公开(公告)号：US12126927B2

    公开(公告)日：2024-10-22

    申请号：US18002444

    申请日：2021-06-17

    申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

    发明人： Eiichi Nakamoto ,  Daisuke Nakagawa

    IPC分类号： H04N25/772 ,  H03M1/38 ,  H04N25/709 ,  H04N25/778

    CPC分类号： H04N25/772 ,  H03M1/38 ,  H04N25/709 ,  H04N25/778

    摘要： There is provided a column signal processing system including a successive approximation register analog-to-digital converter and an imaging device. The imaging device includes a pixel array unit including a plurality of pixels each including a photoelectric conversion element, a column amplifier unit that obtains a difference between a reset component and a signal component input from each pixel of the pixel array unit via a signal line, and outputs the difference as a pixel signal, a capacitance unit that holds the pixel signal input from the column amplifier unit, and a successive approximation register analog-to-digital conversion unit that converts an analog pixel signal input from the capacitance unit into a digital signal, in which the capacitance unit differentiates a single-phase pixel signal input from the column amplifier unit using a reference voltage that defines a zero voltage of the pixel signal.

    IMAGE SENSOR
    5.
    发明公开
    IMAGE SENSOR 审中-公开

    公开(公告)号：US20240213280A1

    公开(公告)日：2024-06-27

    申请号：US18599687

    申请日：2024-03-08

    申请人： Samsung Electronics Co., Ltd.

    发明人： Jae Hong KIM ,  Dae Hwa PAIK ,  Seung Hyun LIM ,  Sin Hwan LIM

    IPC分类号： H01L27/146 ,  H04N25/75 ,  H04N25/767 ,  H04N25/778 ,  H04N25/78

    CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H04N25/75 ,  H04N25/767 ,  H04N25/778 ,  H04N25/78

    摘要： An image sensor includes a first column line and a second column line configured to extend in a first direction, a plurality of pixel groups configured to connect to the first column line or the second column line and to comprise a plurality of pixels in each of the plurality of pixel groups, a bias circuit configured to comprise a first current circuit and a second current circuit configured to output different bias currents in a first operational mode, and a switching circuit configured to connect the first column line to the first current circuit and connect the second column line to the second current circuit during a first time period, and to connect the first column line to the second current circuit and connect the second column line to the first current circuit during a second time period subsequent to the first time period in the first operational mode.

    Solid-state image sensor with imaging device blocks that each include imaging devices
    6.
    发明授权
    Solid-state image sensor with imaging device blocks that each include imaging devices 有权

    公开(公告)号：US12002823B2

    公开(公告)日：2024-06-04

    申请号：US17252787

    申请日：2019-06-07

    申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

    发明人： Toshiaki Ono

    IPC分类号： H01L27/146 ,  H04N25/778 ,  H10K39/32

    CPC分类号： H01L27/14609 ,  H01L27/14645 ,  H04N25/778 ,  H10K39/32

    摘要： A solid-state image sensor includes a plurality of imaging device blocks each including P×Q imaging devices. In an imaging device block, first charge movement controlling electrodes are provided between the imaging devices, and second charge movement controlling electrodes are provided between the imaging device blocks. In the imaging device block, P imaging devices are arrayed along a first direction, and Q imaging devices are arrayed along a second direction. Charge accumulated in a photoelectric conversion layer of the (P−1)th imaging device from the first imaging device along the first direction is transferred to the photoelectric conversion layer of the Pth imaging device and read out together with charge accumulated in the photoelectric conversion layers of the Q Pth imaging devices, under the control of the first charge movement controlling electrodes.

    PHOTOELECTRIC CONVERSION DEVICE AND IMAGING SYSTEM
    7.
    发明公开
    PHOTOELECTRIC CONVERSION DEVICE AND IMAGING SYSTEM 审中-公开

    公开(公告)号：US20240080588A1

    公开(公告)日：2024-03-07

    申请号：US18510396

    申请日：2023-11-15

    申请人： CANON KABUSHIKI KAISHA

    发明人： Kazuo Yamazaki

    IPC分类号： H04N25/772 ,  G06T7/50 ,  H04N25/766 ,  H04N25/778

    CPC分类号： H04N25/772 ,  G06T7/50 ,  H04N25/766 ,  H04N25/778

    摘要： The photoelectric conversion device includes a plurality of pixels arranged to form a plurality of columns, a plurality of AD conversion circuits provided corresponding to the plurality of columns, and a control circuit configured to control the AD conversion circuits. The plurality of pixels includes an OB pixel arranged in a first column and an effective pixel arranged in a second column. The plurality of AD conversion circuits each include a first AD conversion circuit including a first comparator receiving a signal of the OB pixel, and a second AD conversion circuit including a second comparator receiving a signal of the effective pixel. The control circuit controls the first and second comparators such that the result of the AD conversion by the first AD conversion circuit is determined earlier than the result of the AD conversion by the second AD conversion circuit for signals of the same level.