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公开(公告)号:US11624027B2
公开(公告)日:2023-04-11
申请号:US17366429
申请日:2021-07-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sung Woo Kim , Eun Joo Jang , Hyo Sook Jang , Hwea Yoon Kim , Yuho Won
Abstract: A quantum dot according to an embodiment includes a core including a first semiconductor nanocrystal including zinc, selenium, and tellurium and a semiconductor nanocrystal shell on the core, the semiconductor nanocrystal shell including a zinc chalcogenide, wherein the quantum dot does not include cadmium, the zinc chalcogenide includes zinc and selenium, the quantum dot further includes gallium and a primary amine having 5 or more carbon atoms, and the quantum dot is configured to emit light having a maximum emission peak in a range of greater than about 450 nanometers (nm) and less than or equal to about 480 nm by excitation light. A method of producing the quantum dot and an electronic device including the same are also disclosed.
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公开(公告)号:US11713418B2
公开(公告)日:2023-08-01
申请号:US17558774
申请日:2021-12-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Yuho Won , Hwea Yoon Kim , Jeong Hee Lee , Eun Joo Jang , Hyo Sook Jang
IPC: C09K11/88 , C09K11/02 , C01G9/00 , H01L33/50 , B82Y20/00 , B82Y40/00 , H10K50/115 , H10K102/00
CPC classification number: C09K11/883 , C01G9/006 , C09K11/025 , H01L33/50 , B82Y20/00 , B82Y40/00 , C01P2004/04 , C01P2004/64 , C01P2006/60 , H10K50/115 , H10K2102/00
Abstract: A quantum dot including zinc, tellurium, selenium, and sulfur, wherein the quantum dot comprises a core and a shell disposed on the core, and wherein the quantum dot is a cadmium-free red light-emitting quantum dot and has an emission peak wavelength of greater than or equal to about 600 nanometers (nm), and efficiency of greater than or equal to about 50%.
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公开(公告)号:US11575099B2
公开(公告)日:2023-02-07
申请号:US17030543
申请日:2020-09-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Dae Young Chung , Hwea Yoon Kim , Yeonkyung Lee , Eun Joo Jang
IPC: H01L51/50
Abstract: An electroluminescent device and a display device including the same. The electroluminescent device includes a first electrode and a second electrode facing each other; a light emitting layer disposed between the first electrode and the second electrode, the light emitting layer including a quantum dot; a hole transport layer disposed between the light emitting layer and the first electrode; and an electron transport layer disposed between the light emitting layer and the second electrode, wherein the hole transport layer, the light emitting layer, or a combination thereof includes thermally activated delayed fluorescence material, and the thermally activated delayed fluorescence material is present in an amount of greater than or equal to about 0.01 wt % and less than about 10 weight percent (wt %), based on 100 wt % of the hole transport layer, the light emitting layer, or the combination thereof including the thermally activated delayed fluorescence material.
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公开(公告)号:US12146091B2
公开(公告)日:2024-11-19
申请号:US18297755
申请日:2023-04-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sung Woo Kim , Eun Joo Jang , Hyo Sook Jang , Hwea Yoon Kim , Yuho Won
Abstract: A quantum dot according to an embodiment includes a core including a first semiconductor nanocrystal including zinc, selenium, and tellurium and a semiconductor nanocrystal shell on the core, the semiconductor nanocrystal shell including a zinc chalcogenide, wherein the quantum dot does not include cadmium, the zinc chalcogenide includes zinc and selenium, the quantum dot further includes gallium and a primary amine having 5 or more carbon atoms, and the quantum dot is configured to emit light having a maximum emission peak in a range of greater than about 450 nanometers (nm) and less than or equal to about 480 nm by excitation light. A method of producing the quantum dot and an electronic device including the same are also disclosed.
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