公开(公告)号：US20240071751A1

公开(公告)日：2024-02-29

申请号：US18237712

申请日：2023-08-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Moosong LEE ,  Sangho YUN ,  Hyoungkook Kim

IPC: H01L21/02 ,  H01L21/449 ,  H01L21/67

CPC classification number: H01L21/02282 ,  H01L21/449 ,  H01L21/6715 ,  H01L21/67253 ,  G03F7/162

Abstract: A method of manufacturing a semiconductor device. The method includes providing a viscous solution to a wafer, spinning the wafer to coat at least a portion of the wafer with the viscous solution, and treating the wafer coated with the viscous solution, by using an acoustic wave, wherein a frequency of the acoustic wave and an eigenfrequency of the wafer coated with the viscous solution are same.