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公开(公告)号：US20210074332A1
公开(公告)日：2021-03-11
申请号：US16877752
申请日：2020-05-19
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： WOOSUNG LEE , Chunghyun Ryu , Hyoungtaek Lim
Abstract: A memory system and storage device are provided, including: an auxiliary power device having at least one capacitor, wherein the at least one capacitor has a first path for leakage current; a charging circuit including a switch connected to the auxiliary power device; and a state determining circuit connected to the auxiliary power device, wherein the state determining circuit includes a path circuit connected in parallel with the at least one capacitor to form a second path having at least one of a resistance lower than a resistance of the first path or a current source.
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公开(公告)号：US11854645B2
公开(公告)日：2023-12-26
申请号：US17694946
申请日：2022-03-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Woosung Lee , Chunghyun Ryu , Hyoungtaek Lim
Abstract: A memory system and storage device are provided, including: an auxiliary power device having at least one capacitor, wherein the at least one capacitor has a first path for leakage current; a charging circuit including a switch connected to the auxiliary power device; and a state determining circuit connected to the auxiliary power device, wherein the state determining circuit includes a path circuit connected in parallel with the at least one capacitor to form a second path having at least one of a resistance lower than a resistance of the first path or a current source.
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公开(公告)号：US12142317B2
公开(公告)日：2024-11-12
申请号：US17876077
申请日：2022-07-28
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hojin Chun , Minsung Kil , Hyoungtaek Lim
Abstract: A storage device includes a main system; a power loss protection integrated circuit (PLP IC) configured to provide output power to the main system based on external or internal power; and an auxiliary power supply configured to provide the internal power to the PLP IC. The main system may operate in a dump mode where data is backed up in response to at least one of a first condition or a second condition being satisfied. The PLP IC may provide the output power based on the internal power in response to a sudden power off (SPO) occurring. The first condition is satisfied when the SPO occurs and an SPO time is longer than a maximum filtering time. The second condition is satisfied when the SPO occurs and a voltage level of the internal power provided by the auxiliary power supply is lower than a voltage level of a threshold voltage.
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4.发明授权公开(公告)号：US11295785B2
公开(公告)日：2022-04-05
申请号：US16877752
申请日：2020-05-19
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Woosung Lee , Chunghyun Ryu , Hyoungtaek Lim
Abstract: A memory system and storage device are provided, including: an auxiliary power device having at least one capacitor, wherein the at least one capacitor has a first path for leakage current; a charging circuit including a switch connected to the auxiliary power device; and a state determining circuit connected to the auxiliary power device, wherein the state determining circuit includes a path circuit connected in parallel with the at least one capacitor to form a second path having at least one of a resistance lower than a resistance of the first path or a current source.
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