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公开(公告)号：US20210074332A1
公开(公告)日：2021-03-11
申请号：US16877752
申请日：2020-05-19
发明人： WOOSUNG LEE , Chunghyun Ryu , Hyoungtaek Lim
摘要： A memory system and storage device are provided, including: an auxiliary power device having at least one capacitor, wherein the at least one capacitor has a first path for leakage current; a charging circuit including a switch connected to the auxiliary power device; and a state determining circuit connected to the auxiliary power device, wherein the state determining circuit includes a path circuit connected in parallel with the at least one capacitor to form a second path having at least one of a resistance lower than a resistance of the first path or a current source.
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2.发明授权公开(公告)号：US11295785B2
公开(公告)日：2022-04-05
申请号：US16877752
申请日：2020-05-19
发明人： Woosung Lee , Chunghyun Ryu , Hyoungtaek Lim
摘要： A memory system and storage device are provided, including: an auxiliary power device having at least one capacitor, wherein the at least one capacitor has a first path for leakage current; a charging circuit including a switch connected to the auxiliary power device; and a state determining circuit connected to the auxiliary power device, wherein the state determining circuit includes a path circuit connected in parallel with the at least one capacitor to form a second path having at least one of a resistance lower than a resistance of the first path or a current source.
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公开(公告)号：US11854645B2
公开(公告)日：2023-12-26
申请号：US17694946
申请日：2022-03-15
发明人： Woosung Lee , Chunghyun Ryu , Hyoungtaek Lim
摘要： A memory system and storage device are provided, including: an auxiliary power device having at least one capacitor, wherein the at least one capacitor has a first path for leakage current; a charging circuit including a switch connected to the auxiliary power device; and a state determining circuit connected to the auxiliary power device, wherein the state determining circuit includes a path circuit connected in parallel with the at least one capacitor to form a second path having at least one of a resistance lower than a resistance of the first path or a current source.
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