公开(公告)号：US20210074332A1

公开(公告)日：2021-03-11

申请号：US16877752

申请日：2020-05-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： WOOSUNG LEE ,  Chunghyun Ryu ,  Hyoungtaek Lim

IPC: G11C5/00 ,  G11C5/14

Abstract: A memory system and storage device are provided, including: an auxiliary power device having at least one capacitor, wherein the at least one capacitor has a first path for leakage current; a charging circuit including a switch connected to the auxiliary power device; and a state determining circuit connected to the auxiliary power device, wherein the state determining circuit includes a path circuit connected in parallel with the at least one capacitor to form a second path having at least one of a resistance lower than a resistance of the first path or a current source.

公开(公告)号：US20210320123A1

公开(公告)日：2021-10-14

申请号：US17036594

申请日：2020-09-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SANGSOO LEE ,  CHAEHO KIM ,  WOOSUNG LEE ,  PHIL OUK NAM ,  JUNGGEUN JEE

IPC: H01L27/11582 ,  H01L27/11519 ,  H01L27/11556 ,  H01L27/11529 ,  H01L27/11565 ,  H01L27/11573 ,  H01L23/535

Abstract: Disclosed is a three-dimensional semiconductor memory device including a carbon-containing layer on a substrate, a plurality of electrode interlayer dielectric layers and a plurality of electrode layers that are alternately stacked on the carbon-containing layer, a cell vertical pattern that penetrates at least some of the electrode interlayer dielectric layers and the electrode layers, and a semiconductor pattern between the cell vertical pattern and the carbon-containing layer. The substrate includes a plurality of first grains. The semiconductor pattern includes a plurality of second grains. An average size of the second grains is less than an average size of the first grains.