公开(公告)号：US20240282764A1

公开(公告)日：2024-08-22

申请号：US18443892

申请日：2024-02-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyukhoon KWON ,  Chanhee JEON ,  Kyoungil DO ,  Mijin LEE

IPC: H01L27/02 ,  H02H9/04

CPC classification number: H01L27/0259 ,  H01L27/0255 ,  H01L27/0288 ,  H02H9/046

Abstract: Provided is a device including a first well having a first conductivity type, a first gate electrode on the first well, a first region and a second region each having a second conductivity type on the first well with the first gate electrode disposed therebetween, a third region having the second conductivity type on the first well, and a fourth region having the first conductivity type on the first well. The first gate electrode and the first region are electrically connected to a first node, and the third region is electrically connected to a second node.