公开(公告)号：US20130208541A1

公开(公告)日：2013-08-15

申请号：US13841503

申请日：2013-03-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Yong YOON ,  Ki Tae PARK ,  Moo Sung KIM ,  Bo Geun KIM ,  Hyun jun YOON

IPC: G11C16/10

CPC classification number: G11C16/3459 ,  G11C11/56 ,  G11C11/5671 ,  G11C16/10 ,  G11C16/3454

Abstract: A method of programming a flash memory device comprises programming selected memory cells, performing a verification operation to determine whether the selected memory cells have reached a target program state, and determining a start point of the verification operation based on a programming characteristic associated with a detection of a pass bit during programming of an initial program state.