公开(公告)号：US20140043904A1

公开(公告)日：2014-02-13

申请号：US14062088

申请日：2013-10-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong-Young KIM ,  Ki Tae PARK ,  Bo Geun KIM

IPC: G11C16/26

CPC classification number: G11C16/26 ,  G11C11/5628

Abstract: A memory system performs a first sensing operation to sense whether multi-level cells assume an on-cell state or an off-cell state in response to a first read voltage applied to a selected word line. It then supplies a pre-charge voltage to bit lines corresponding to multi-level cells that have been sensed as assuming the off-cell state in response to the first read voltage, and it performs a second sensing operation with the supplied pre-charge voltage to sense whether each of the multi-level cells that have been sensed as assuming the off-cell state assumes an on-cell state or an off-cell state in response to a second read voltage applied to the selected word line.

Abstract translation: 存储器系统执行第一感测操作以响应于施加到所选字线的第一读取电压来感测多电平单元是否呈现接通电池状态还是关闭电池状态。 然后，将预充电电压提供给对应于响应于第一读取电压而被感测为假电池状态的多电平电池的位线，并且其执行具有所提供的预充电电压的第二感测操作 检测出响应于施加到所选择的字线的第二读取电压，已经被感测为假设关闭单元状态的每个多电平单元是否处于接通电池状态或关闭单元状态。

公开(公告)号：US20130329497A1

公开(公告)日：2013-12-12

申请号：US13969929

申请日：2013-08-19

Applicant: Samsung Electronics Co., Ltd

Inventor： Sang Yong YOON ,  Dong Hyuk CHAE ,  Bo Geun KIM

IPC: G11C16/10

CPC classification number: G11C16/10 ,  G11C11/5628 ,  G11C11/5642 ,  G11C2211/5648

Abstract: A memory system comprises a multi-bit memory device and a memory controller that controls the multi-bit memory device. The memory system determines whether a requested program operation is a random program operation or a sequential program operation. Where the requested program operation is a random program operation, the memory controller controls the multi-bit memory device to perform operations according to a fine program close policy or a fine program open policy.

Abstract translation: 存储器系统包括多位存储器件和控制多位存储器件的存储器控​​制器。 存储器系统确定所请求的程序操作是随机程序操作还是顺序程序操作。 在所请求的程序操作是随机程序操作的情况下，存储器控制器控制多位存储器件根据精细程序关闭策略或精细程序打开策略执行操作。

公开(公告)号：US20130208541A1

公开(公告)日：2013-08-15

申请号：US13841503

申请日：2013-03-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Yong YOON ,  Ki Tae PARK ,  Moo Sung KIM ,  Bo Geun KIM ,  Hyun jun YOON

IPC: G11C16/10

CPC classification number: G11C16/3459 ,  G11C11/56 ,  G11C11/5671 ,  G11C16/10 ,  G11C16/3454

Abstract: A method of programming a flash memory device comprises programming selected memory cells, performing a verification operation to determine whether the selected memory cells have reached a target program state, and determining a start point of the verification operation based on a programming characteristic associated with a detection of a pass bit during programming of an initial program state.