公开(公告)号：US20240275387A1

公开(公告)日：2024-08-15

申请号：US18234517

申请日：2023-08-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Won Ji PARK ,  Sunoo KIM ,  Jaehee OH ,  Hyungwon KIM ,  WooSeong JANG ,  Taekyung KIM ,  Youngbin HYUN

IPC: H03K19/08

CPC classification number: H03K19/08

Abstract: A logic device includes a substrate; at least one first insulating layer on the substrate; a second insulating layer on the at least one first insulating layer; and a capacitor portion in the at least one first insulating layer and the second insulating layer, wherein the at least one first insulating layer includes a plurality of through-holes, the capacitor portion includes a capacitor structure including a lower electrode, a dielectric film, and an upper electrode, and the capacitor structure continuously extends along the inside of the plurality of through-holes and along an upper surface of the at least one first insulating layer around the plurality of through-holes.