专利检索 ap:("SAMSUNG ELECTRONICS CO., LTD.") AND inv:"Hyunjun Sim" 第 1 页

1.

发明授权
Three-dimensional semiconductor memory device and method of fabricating the same 有权

公开(公告)号：US09960182B2

公开(公告)日：2018-05-01

申请号：US15634555

申请日：2017-06-27

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Ji-Hoon Choi , SeungHyun Lim , Sunggil Kim , HongSuk Kim , Hunhyeong Lim , Hyunjun Sim

IPC分类号： H01L27/115 , H01L29/10 , H01L27/11582 , H01L27/11565 , H01L27/1157

CPC分类号： H01L27/11582 , H01L27/11565 , H01L27/1157

摘要： A semiconductor memory device includes a stack including gate electrodes sequentially stacked on a substrate, a vertical insulating structure penetrating the stack vertically with respect to the gate electrodes, a vertical channel portion disposed on an inner side surface of the vertical insulating structure, and a common source region formed in the substrate and spaced apart from the vertical channel portion. A bottom region of the vertical channel portion has a protruding surface in contact with a bottom region of the vertical insulating structure.