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1.
公开(公告)号:US20230217129A1
公开(公告)日:2023-07-06
申请号:US17823125
申请日:2022-08-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: JAEYOUNG BAE , SUNYOOL KANG , HAESICK SUL , SUYONG KIM
IPC: H04N5/378 , H04N5/369 , H04N5/376 , H04N5/3745 , H01L27/146
CPC classification number: H04N5/378 , H04N5/3698 , H04N5/3765 , H04N5/379 , H04N5/3745 , H01L27/14612 , H01L27/14621
Abstract: An image sensor includes a pixel array that includes a first pixel group located in a first row and including a first select transistor and a first floating diffusion region, a second pixel group located in a second row and including a second select transistor and a second floating diffusion region, and a column line connected to both the first pixel group and the second pixel group. While charges generated by a photoelectric conversion element of the first pixel group are transferred to the first floating diffusion region, the first select transistor is turned off, the second select transistor is turned on, and a first voltage is applied to the column line through the second select transistor. A photoelectric conversion element of the second pixel group generates charges prior to the photoelectric conversion element of the first pixel group, so as to be transferred to the second floating diffusion region.
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公开(公告)号:US20250063269A1
公开(公告)日:2025-02-20
申请号:US18937826
申请日:2024-11-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: JAEYOUNG BAE , SUNYOOL KANG , HAESICK SUL , SUYONG KIM
IPC: H04N25/75 , H01L27/146 , H04N25/709 , H04N25/71 , H04N25/77 , H04N25/79
Abstract: An image sensor includes a pixel array that includes a first pixel group located in a first row and including a first select transistor and a first floating diffusion region, a second pixel group located in a second row and including a second select transistor and a second floating diffusion region, and a column line connected to both the first pixel group and the second pixel group. While charges generated by a photoelectric conversion element of the first pixel group are transferred to the first floating diffusion region, the first select transistor is turned off, the second select transistor is turned on, and a first voltage is applied to the column line through the second select transistor. A photoelectric conversion element of the second pixel group generates charges prior to the photoelectric conversion element of the first pixel group, so as to be transferred to the second floating diffusion region.
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