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    DISTANCE SENSOR AND IMAGE PROCESSING SYSTEM INCLUDING THE SAME
    2.
    发明申请
    DISTANCE SENSOR AND IMAGE PROCESSING SYSTEM INCLUDING THE SAME 有权
    距离传感器和图像处理系统，包括它们

    公开(公告)号：US20150130902A1

    公开(公告)日：2015-05-14

    申请号：US14075174

    申请日：2013-11-08

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Eric Fossum ,  Tae Yon Lee

    IPC: H01L27/148 ,  H04N13/02

    CPC classification number: H04N13/204 ,  G01S7/4914 ,  G01S7/4915 ,  G06T7/521 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14614

    Abstract: A pixel of a distance sensor includes a photosensor that generates photocharges corresponding to light incident in a first direction. The photosensor includes a plurality of first layers having a cross-sectional area increasing along the first direction after a first depth and at least one transfer gate which receives a transfer control signal for transferring the photocharges to a floating diffusion node. A strong electric field is formed in the direction in which the photocharges move horizontally or vertically in the pixel, thereby accelerating the photocharges, allowing for increased sensitivity and demodulation contrast.

    Abstract translation: 距离传感器的像素包括产生对应于沿第一方向入射的光的光电荷的光传感器。 光传感器包括多个第一层，其具有沿着第一深度之后的第一方向的横截面积增加的多个第一层和接收用于将光电荷转移到浮动扩散节点的转移控制信号的至少一个传输门。 在光电荷在像素中水平或垂直移动的方向上形成强电场，从而加速光电荷，允许增加灵敏度和解调对比度。

    Image sensor with light blocking layer
    3.
    发明授权
    Image sensor with light blocking layer 有权

    公开(公告)号：US11476287B2

    公开(公告)日：2022-10-18

    申请号：US16928263

    申请日：2020-07-14

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Gwi Deok Ryan Lee ,  Jae Kyu Lee ,  Sang Chun Park ,  Tae Yon Lee ,  Jae Hoon Jeon ,  Myung Lae Chu

    IPC: H01L27/146 ,  H01L21/00 ,  H01L27/30 ,  H01L29/786 ,  H04N5/369

    Abstract: An image sensor may include a substrate having a first surface and a second surface on opposite sides, a first transistor having a first gate disposed on the first surface, a photoelectric conversion layer which generates photocharges from light incident in a first direction, a second transistor having a transistor structure disposed between the first surface and the photoelectric conversion layer and spaced from the photoelectric conversion layer, and includes a semiconductor layer composed of a metal oxide semiconductor material. The semiconductor layer may have a third surface facing the first direction and a fourth surface opposite the third surface, with a second gate disposed on the semiconductor layer. The semiconductor layer may be connected to the first gate. A light blocking layer may be disposed between the third surface and the photoelectric conversion layer, and spaced from the photoelectric conversion layer.

    Image sensor
    10.
    发明授权
    Image sensor 有权

    公开(公告)号：US10916587B2

    公开(公告)日：2021-02-09

    申请号：US16443233

    申请日：2019-06-17

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Tae Yon Lee ,  Chang Hwa Kim ,  Jae Ho Kim ,  Sang Chun Park ,  Gwi Deok Ryan Lee ,  Beom Suk Lee ,  Jae Kyu Lee ,  Kazunori Kakehi

    IPC: H01L27/30 ,  H01L27/28

    Abstract: An image sensor includes a first organic photoelectric conversion layer on a base layer, a floating diffusion region in the base layer, a first storage node including a first electrode layer, which is configured to receive a bias signal, a first portion of a first semiconductor layer which includes a semiconductor material, and a first portion of a first dielectric layer. The first dielectric layer extends between the first electrode layer and the first semiconductor layer. The first storage node is electrically connected to the first organic photoelectric conversion layer. The image sensor includes a first transfer transistor including the first dielectric layer, the first semiconductor layer, and a first transfer gate electrode which is configured to receive first transfer control signal. The first transfer transistor has a first end electrically connected to the first storage node and a second end electrically connected to the floating diffusion region.

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