公开(公告)号：US12051694B2

公开(公告)日：2024-07-30

申请号：US18168332

申请日：2023-02-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chang-Woo Noh ,  Jae-Hyeoung Ma ,  Dong-Il Bae

IPC: H01L27/088 ,  H01L21/02 ,  H01L21/308 ,  H01L21/8234 ,  H01L29/10 ,  H01L29/165 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L27/0886 ,  H01L21/02532 ,  H01L21/3086 ,  H01L21/823412 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823468 ,  H01L21/823481 ,  H01L29/1033 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/6681 ,  H01L29/785

Abstract: A semiconductor device may include first channels on a first region of a substrate and spaced apart from each other in a vertical direction substantially perpendicular to an upper surface of the substrate, second channels on a second region of the substrate and spaced apart from each other in the vertical direction, a first gate structure on the first region of the substrate and covering at least a portion of a surface of each of the first channels, and a second gate structure on the second region of the substrate and covering at least a portion of a surface of each of the second channels. The second channels may be disposed at heights substantially the same as those of corresponding ones of the first channels, and a height of a lowermost one of the second channels may be greater than a height of a lowermost one of the first channels.

公开(公告)号：US20230197719A1

公开(公告)日：2023-06-22

申请号：US18168332

申请日：2023-02-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chang-Woo Noh ,  Jae-Hyeoung Ma ,  Dong-Il Bae

IPC: H01L27/088 ,  H01L29/165 ,  H01L29/66 ,  H01L29/78 ,  H01L29/10 ,  H01L21/8234 ,  H01L21/02 ,  H01L21/308

CPC classification number: H01L27/0886 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/6681 ,  H01L29/785 ,  H01L29/1033 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823481 ,  H01L21/823468 ,  H01L21/823412 ,  H01L21/02532 ,  H01L21/3086

Abstract: A semiconductor device may include first channels on a first region of a substrate and spaced apart from each other in a vertical direction substantially perpendicular to an upper surface of the substrate, second channels on a second region of the substrate and spaced apart from each other in the vertical direction, a first gate structure on the first region of the substrate and covering at least a portion of a surface of each of the first channels, and a second gate structure on the second region of the substrate and covering at least a portion of a surface of each of the second channels. The second channels may be disposed at heights substantially the same as those of corresponding ones of the first channels, and a height of a lowermost one of the second channels may be greater than a height of a lowermost one of the first channels.

公开(公告)号：US11581312B2

公开(公告)日：2023-02-14

申请号：US17173546

申请日：2021-02-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chang-Woo Noh ,  Jae-Hyeoung Ma ,  Dong-Îl Bae

IPC: H01L27/088 ,  H01L29/165 ,  H01L29/66 ,  H01L29/78 ,  H01L29/10 ,  H01L21/8234 ,  H01L21/02 ,  H01L21/308

Abstract: A semiconductor device may include first channels on a first region of a substrate and spaced apart from each other in a vertical direction substantially perpendicular to an upper surface of the substrate, second channels on a second region of the substrate and spaced apart from each other in the vertical direction, a first gate structure on the first region of the substrate and covering at least a portion of a surface of each of the first channels, and a second gate structure on the second region of the substrate and covering at least a portion of a surface of each of the second channels. The second channels may be disposed at heights substantially the same as those of corresponding ones of the first channels, and a height of a lowermost one of the second channels may be greater than a height of a lowermost one of the first channels.

公开(公告)号：US10937787B2

公开(公告)日：2021-03-02

申请号：US16354505

申请日：2019-03-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chang-Woo Noh ,  Jae-Hyeoung Ma ,  Dong-Il Bae

IPC: H01L27/088 ,  H01L29/165 ,  H01L29/66 ,  H01L29/78 ,  H01L29/10 ,  H01L21/8234 ,  H01L21/02 ,  H01L21/308

Abstract: A semiconductor device may include first channels on a first region of a substrate and spaced apart from each other in a vertical direction substantially perpendicular to an upper surface of the substrate, second channels on a second region of the substrate and spaced apart from each other in the vertical direction, a first gate structure on the first region of the substrate and covering at least a portion of a surface of each of the first channels, and a second gate structure on the second region of the substrate and covering at least a portion of a surface of each of the second channels. The second channels may be disposed at heights substantially the same as those of corresponding ones of the first channels, and a height of a lowermost one of the second channels may be greater than a height of a lowermost one of the first channels.