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1.发明授权Nonvolatile memory device, a memory system having the same, and a read method thereof, the read method applying a read pass voltage to a selected wordline after a sensing 有权非易失性存储器件，具有其的存储器系统及其读取方法，该读取方法在感测之后将读通过电压施加到所选择的字线公开(公告)号：US09183939B2
公开(公告)日：2015-11-10
申请号：US14242332
申请日：2014-04-01
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sang-Wan Nam , Kitae Park , Hyun-Wook Park , Jae-Kyun Rhee
CPC classification number: G11C16/26 , G11C11/5628 , G11C16/0483 , G11C16/3427
Abstract: A method of reading a nonvolatile memory device including: applying a read voltage to a selected wordline of the nonvolatile memory device; applying a read pass voltage to unselected wordlines of the nonvolatile memory device; sensing a state of a memory cell connected to the selected wordline; and applying the read pass voltage to the selected wordline after the sensing.
Abstract translation: 一种读取非易失性存储器件的方法，包括：将读取电压施加到非易失性存储器件的选定字线; 对非易失性存储器件的未选字线施加读通过电压; 感测连接到所选字线的存储单元的状态; 并且在感测之后将读通道电压施加到所选择的字线。
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