公开(公告)号：US20180135177A1

公开(公告)日：2018-05-17

申请号：US15659940

申请日：2017-07-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JongCheol LEE ,  Jaechul SHIN ,  MinHwa JUNG ,  Sukjin CHUNG ,  Geunkyu CHOI ,  Jung Hwan LEE

IPC: C23C16/455 ,  C23C16/458 ,  H01L21/687

CPC classification number: C23C16/45565 ,  C23C16/45534 ,  C23C16/45551 ,  C23C16/458 ,  C23C16/4584 ,  H01L21/68771

Abstract: A gas injection apparatus injecting process gases toward a substrate includes a base part, a first gas injection part on the base part, the first gas injection part to inject a first gas including a reaction-inhibiting functional group, a second gas injection part spaced apart from the first gas injection part in one direction on the base part, the second gas injection part to inject a second gas including a precursor of a specific material, and a third gas injection part spaced apart from the second gas injection part in the one direction on the base part, the third gas injection part to inject a third gas reacting with the precursor of the specific material.