公开(公告)号：US20220285174A1

公开(公告)日：2022-09-08

申请号：US17499988

申请日：2021-10-13

Applicant: SAMSUNG ELECTRONICS CO., LTD

Inventor： Byunghwan KONG ,  Heeyeon KIM ,  Homin SON ,  Geunkyu CHOI

IPC: H01L21/67

Abstract: A substrate processing method includes: disposing a wafer in a wafer region of a tube; injecting an inert gas into a gap region, of the tube, between an inner side wall of the tube and the wafer disposed in the wafer region; and injecting a process gas into the wafer region of the tube, wherein a pressure of the gap region of the tube is higher than a pressure at an edge of the wafer region of the tube during the injection of the inert gas and the process gas.

公开(公告)号：US20180135177A1

公开(公告)日：2018-05-17

申请号：US15659940

申请日：2017-07-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JongCheol LEE ,  Jaechul SHIN ,  MinHwa JUNG ,  Sukjin CHUNG ,  Geunkyu CHOI ,  Jung Hwan LEE

IPC: C23C16/455 ,  C23C16/458 ,  H01L21/687

CPC classification number: C23C16/45565 ,  C23C16/45534 ,  C23C16/45551 ,  C23C16/458 ,  C23C16/4584 ,  H01L21/68771

Abstract: A gas injection apparatus injecting process gases toward a substrate includes a base part, a first gas injection part on the base part, the first gas injection part to inject a first gas including a reaction-inhibiting functional group, a second gas injection part spaced apart from the first gas injection part in one direction on the base part, the second gas injection part to inject a second gas including a precursor of a specific material, and a third gas injection part spaced apart from the second gas injection part in the one direction on the base part, the third gas injection part to inject a third gas reacting with the precursor of the specific material.