公开(公告)号：US20200350477A1

公开(公告)日：2020-11-05

申请号：US16864564

申请日：2020-05-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaephil SHIM ,  Jihoon KANG ,  Myunghee KIM ,  Jenghun SUH ,  Jitsuo OTA

IPC: H01L33/62 ,  H01L33/50 ,  H01L33/60 ,  G09G3/32 ,  H01L33/00 ,  H01L25/075

Abstract: A display panel including a plurality of LED elements and a driving circuit configured to drive the plurality of LED elements. The plurality of LED elements includes an LED element having a first light emitting cell including a first light emitting layer, a tunnel junction layer formed on the first light emitting layer, and a second light emitting cell formed on the tunnel junction layer and including a second light emitting layer. A first electrode is electrically connected to the first light emitting cell, and a second electrode is electrically connected to the second light emitting cell. The first light emitting cell is electrically connected to the second light emitting cell through the tunnel junction layer. The LED element is a flip-chip type LED element.

公开(公告)号：US20200349882A1

公开(公告)日：2020-11-05

申请号：US16864702

申请日：2020-05-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myunghee KIM ,  Jenghun SUH ,  Jaephil SHIM ,  Jihoon KANG ,  Jitsuo OTA

IPC: G09G3/32 ,  H01L51/50 ,  G09G3/20 ,  H01L33/00 ,  H01L51/52

Abstract: Disclosed are a display panel including an LED device and a method for manufacturing a display module. According to an embodiment, the method for manufacturing the display module includes: forming a plurality of light emitting diodes (LEDs); and forming a plurality of partition walls that divide light-emitting regions by each of the plurality of LEDs, wherein the forming the plurality of LEDs includes: etching a growth substrate to form a plurality of LEDs and forming a plurality of protrusions and a plurality of depressions on the growth substrate; and forming a reflector layer on a surface of the plurality of protrusions and a surface of the plurality of depressions, and wherein the forming the plurality of partition walls includes removing a part of the growth substrate so that the plurality of partition walls are formed based on the plurality of protrusions, and a space between the plurality of partition walls is formed based on the plurality of depressions.

公开(公告)号：US20210005797A1

公开(公告)日：2021-01-07

申请号：US16916321

申请日：2020-06-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihoon KANG ,  Jitsuo OTA ,  Jenghun SUH ,  Jaephil SHIM ,  Myunghee KIM

IPC: H01L33/58 ,  H01L25/075 ,  H01L27/12 ,  H01L33/00 ,  H01L33/50 ,  H01L33/60 ,  H01L33/62

Abstract: An LED device includes: a first semiconductor layer of a first type; a second semiconductor layer of a second type; a light emitting layer formed between the first semiconductor layer and the second semiconductor layer and configured to emit light; and a filter formed on the second semiconductor layer and configured to transmit light in the second wavelength band within the first wavelength band. The filter includes a defect layer, first refractive layers, and second refractive layers having a refractive index greater than a refractive index of the first refractive layers, the first refractive layers and the second refractive layers are formed alternately on one side and other side of the defect layer. A thickness of the defect layer is determined based on a center wavelength of the first wavelength band, a peak wavelength of the second wavelength band and a refractive index of the defect layer.

公开(公告)号：US20200052151A1

公开(公告)日：2020-02-13

申请号：US16533925

申请日：2019-08-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinhee KANG ,  Jaephil SHIM

IPC: H01L33/00 ,  H01L33/38 ,  H01L33/44 ,  H01L33/40 ,  H01L25/16 ,  H01L33/50 ,  H01L33/32

Abstract: A flip-chip light emitting diode (LED), a display device including at least one flip-chip LED, and a method of manufacturing the LED. The flip-chip LED including a light-emitting layer; an n-type semiconductor layer laminated on a lower part of the light-emitting layer; a p-type semiconductor layer laminated on an upper part of the light-emitting layer; a first electrode that is electrically connected to the n-type semiconductor layer via a first contact hole formed in the LED; a second electrode that is electrically connected to the p-type semiconductor layer, and is electrically insulated from the first electrode; a metal layer provided in a first area, a second area, and a third area; a third electrode that is formed on the metal layer in the third area, is electrically connected to the metal layer, and is electrically insulated from the first electrode and the second electrode; and a plurality of insulating layers.