公开(公告)号：US20240112915A1

公开(公告)日：2024-04-04

申请号：US18474849

申请日：2023-09-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Janghoon Kim ,  Sangho Yun ,  Chan Hwang

IPC: H01L21/033 ,  H01L21/027 ,  H01L21/311

CPC classification number: H01L21/0337 ,  H01L21/0274 ,  H01L21/31144

Abstract: A method of fabricating a semiconductor device may implement a desired mask pattern even without additionally performing an exposure process on any one of different regions of a substrate by forming a plurality of line patterns disposed at different intervals on the different regions, respectively, and applying a double patterning process to the plurality of line patterns. Such a method may increase product reliability and manufacturing economic feasibility of a semiconductor device.