公开(公告)号：US11239385B2

公开(公告)日：2022-02-01

申请号：US16844616

申请日：2020-04-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeonghwan Jang ,  Jae-Yoon Kim ,  Sungwon Ko ,  Junghee Kwak ,  Sangseok Lee ,  Suyeol Lee ,  Seungwan Chae ,  Pun Jae Choi

IPC: H01L33/40 ,  H01L33/24 ,  H01L33/62 ,  H01L33/00

Abstract: A light emitting device is provided. The light emitting device includes a first semiconductor layer; a second semiconductor layer provided on a bottom surface of the first semiconductor layer; an active layer interposed between the first semiconductor layer and the second semiconductor layer; a dielectric layer provided on a bottom surface of the second semiconductor layer; a plurality of first n-contacts provided on a first etched surface of the first semiconductor layer; and a plurality of first p-contacts and a plurality of second p-contacts provided on the bottom surface of the second semiconductor layer. One first n-contact is disposed along a first edge region of the first semiconductor layer, one first p-contact is closer to the one first n-contact than one second p-contact, and an area of the one first p-contact is greater than an area of each of the second p-contacts.

公开(公告)号：US11658259B2

公开(公告)日：2023-05-23

申请号：US17589192

申请日：2022-01-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeonghwan Jang ,  Jae-Yoon Kim ,  Sungwon Ko ,  Junghee Kwak ,  Sangseok Lee ,  Suyeol Lee ,  Seungwan Chae ,  Pun Jae Choi

IPC: H01L33/40 ,  H01L33/24 ,  H01L33/62 ,  H01L33/00

CPC classification number: H01L33/0016 ,  H01L33/24 ,  H01L33/405 ,  H01L33/62

Abstract: A light emitting device is provided. The light emitting device includes a first semiconductor layer; a second semiconductor layer provided on a bottom surface of the first semiconductor layer; an active layer interposed between the first semiconductor layer and the second semiconductor layer; a dielectric layer provided on a bottom surface of the second semiconductor layer; a plurality of first n-contacts provided on a first etched surface of the first semiconductor layer; and a plurality of first p-contacts and a plurality of second p-contacts provided on the bottom surface of the second semiconductor layer. One first n-contact is disposed along a first edge region of the first semiconductor layer, one first p-contact is closer to the one first n-contact than one second p-contact, and an area of the one first p-contact is greater than an area of each of the second p-contacts.