公开(公告)号：US11658259B2

公开(公告)日：2023-05-23

申请号：US17589192

申请日：2022-01-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeonghwan Jang ,  Jae-Yoon Kim ,  Sungwon Ko ,  Junghee Kwak ,  Sangseok Lee ,  Suyeol Lee ,  Seungwan Chae ,  Pun Jae Choi

IPC: H01L33/40 ,  H01L33/24 ,  H01L33/62 ,  H01L33/00

CPC classification number: H01L33/0016 ,  H01L33/24 ,  H01L33/405 ,  H01L33/62

Abstract: A light emitting device is provided. The light emitting device includes a first semiconductor layer; a second semiconductor layer provided on a bottom surface of the first semiconductor layer; an active layer interposed between the first semiconductor layer and the second semiconductor layer; a dielectric layer provided on a bottom surface of the second semiconductor layer; a plurality of first n-contacts provided on a first etched surface of the first semiconductor layer; and a plurality of first p-contacts and a plurality of second p-contacts provided on the bottom surface of the second semiconductor layer. One first n-contact is disposed along a first edge region of the first semiconductor layer, one first p-contact is closer to the one first n-contact than one second p-contact, and an area of the one first p-contact is greater than an area of each of the second p-contacts.

公开(公告)号：US12284843B2

公开(公告)日：2025-04-22

申请号：US17569028

申请日：2022-01-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngkyu Sung ,  Dooho Jeong ,  Myunggoo Cheong ,  Seungwan Chae

IPC: H01L33/24 ,  H01L33/22 ,  H01L33/60 ,  H01L33/62 ,  H10H20/82 ,  H10H20/821 ,  H10H20/856 ,  H10H20/857 ,  H10H29/10 ,  H10H20/01 ,  H10H20/825 ,  H10H20/833

Abstract: A semiconductor light emitting device package includes: a substrate; a first semiconductor layer including first regions including a first-type semiconductor material and having a first height, and a second region disposed between the first regions and having a second height lower than the first height; an active layer including disposed in the first regions, and emitting light of a predetermined wavelength band; a second semiconductor layer disposed on the active layer and formed of a second-type semiconductor material; a third semiconductor layer disposed on the second semiconductor layer, and formed of a second-type semiconductor material different from the second-type semiconductor material of the second semiconductor layer; a transparent electrode layer including disposed on the third semiconductor layer; and a reflective electrode layer electrically connected to the transparent electrode layer, respectively, and including portions overlapping the active layer in a vertical direction and a horizontal direction, respectively.

公开(公告)号：US11239385B2

公开(公告)日：2022-02-01

申请号：US16844616

申请日：2020-04-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeonghwan Jang ,  Jae-Yoon Kim ,  Sungwon Ko ,  Junghee Kwak ,  Sangseok Lee ,  Suyeol Lee ,  Seungwan Chae ,  Pun Jae Choi

IPC: H01L33/40 ,  H01L33/24 ,  H01L33/62 ,  H01L33/00

Abstract: A light emitting device is provided. The light emitting device includes a first semiconductor layer; a second semiconductor layer provided on a bottom surface of the first semiconductor layer; an active layer interposed between the first semiconductor layer and the second semiconductor layer; a dielectric layer provided on a bottom surface of the second semiconductor layer; a plurality of first n-contacts provided on a first etched surface of the first semiconductor layer; and a plurality of first p-contacts and a plurality of second p-contacts provided on the bottom surface of the second semiconductor layer. One first n-contact is disposed along a first edge region of the first semiconductor layer, one first p-contact is closer to the one first n-contact than one second p-contact, and an area of the one first p-contact is greater than an area of each of the second p-contacts.