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Patent Agency Ranking
公开(公告)号：US11239385B2
公开(公告)日：2022-02-01
申请号：US16844616
申请日：2020-04-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jeonghwan Jang , Jae-Yoon Kim , Sungwon Ko , Junghee Kwak , Sangseok Lee , Suyeol Lee , Seungwan Chae , Pun Jae Choi
Abstract: A light emitting device is provided. The light emitting device includes a first semiconductor layer; a second semiconductor layer provided on a bottom surface of the first semiconductor layer; an active layer interposed between the first semiconductor layer and the second semiconductor layer; a dielectric layer provided on a bottom surface of the second semiconductor layer; a plurality of first n-contacts provided on a first etched surface of the first semiconductor layer; and a plurality of first p-contacts and a plurality of second p-contacts provided on the bottom surface of the second semiconductor layer. One first n-contact is disposed along a first edge region of the first semiconductor layer, one first p-contact is closer to the one first n-contact than one second p-contact, and an area of the one first p-contact is greater than an area of each of the second p-contacts.
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公开(公告)号：US11658259B2
公开(公告)日：2023-05-23
申请号：US17589192
申请日：2022-01-31
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jeonghwan Jang , Jae-Yoon Kim , Sungwon Ko , Junghee Kwak , Sangseok Lee , Suyeol Lee , Seungwan Chae , Pun Jae Choi
CPC classification number: H01L33/0016 , H01L33/24 , H01L33/405 , H01L33/62
Abstract: A light emitting device is provided. The light emitting device includes a first semiconductor layer; a second semiconductor layer provided on a bottom surface of the first semiconductor layer; an active layer interposed between the first semiconductor layer and the second semiconductor layer; a dielectric layer provided on a bottom surface of the second semiconductor layer; a plurality of first n-contacts provided on a first etched surface of the first semiconductor layer; and a plurality of first p-contacts and a plurality of second p-contacts provided on the bottom surface of the second semiconductor layer. One first n-contact is disposed along a first edge region of the first semiconductor layer, one first p-contact is closer to the one first n-contact than one second p-contact, and an area of the one first p-contact is greater than an area of each of the second p-contacts.
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公开(公告)号：US11984536B2
公开(公告)日：2024-05-14
申请号：US17308345
申请日：2021-05-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Taehun Kim , Yongmin Kim , Sungwon Ko , Bokyoung Kim , Jinhwan Kim , Wongoo Hur
CPC classification number: H01L33/382 , H01L33/46 , H01L33/62 , H01L33/32 , H01L33/42
Abstract: A semiconductor light emitting device includes a first electrode layer, a light emitting structure on the first electrode layer, a transparent electrode layer between the first electrode layer and the light emitting structure, an interlayer insulating layer between the transparent electrode layer and the first electrode layer, and having first and second openings, a second electrode layer between the first electrode layer and the interlayer insulating layer, and connected to the transparent electrode layer, and an electrode pad contacting the second electrode layer, each of the first openings and at least one of the second openings define one group to have at least first and second groups, the first group being closer to the electrode pad than the second group is, and a distance between the first and second openings in the first group being greater than a distance between the first and second openings in the second group.
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公开(公告)号：US11888091B2
公开(公告)日：2024-01-30
申请号：US17135686
申请日：2020-12-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Taehun Kim , Sungwon Ko , Bokyoung Kim , Jinhwan Kim , Wongoo Hur
CPC classification number: H01L33/38 , H01L33/405 , H01L33/56 , H01L33/644
Abstract: A semiconductor light emitting device includes a substrate structure, first and second regions and a main region; a light emitting structure, first and second electrode layers, an interlayer insulating layer, and a pad electrode layer. The light emitting structure is provided on the third region. The first electrode layer is provided between the substrate structure and the light emitting structure, and has a first electrode extension that extends into the first region. The second electrode layer is provided between the first electrode layer and the light emitting structure, and has a second electrode extension that extends into the second region. The interlayer insulating layer is provided between the first and second electrode layers, and has an opening exposing a portion of the first electrode extension. The pad electrode layer is provided on the interlayer insulating layer, and is connected to the portion of the first electrode extension through the opening.
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公开(公告)号：US20210367108A1
公开(公告)日：2021-11-25
申请号：US17135686
申请日：2020-12-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Taehun Kim , Sungwon Ko , Bokyoung Kim , Jinhwan Kim , Wongoo Hur
Abstract: A semiconductor light emitting device includes a substrate structure, first and second regions and a main region; a light emitting structure, first and second electrode layers, an interlayer insulating layer, and a pad electrode layer. The light emitting structure is provided on the third region. The first electrode layer is provided between the substrate structure and the light emitting structure, and has a first electrode extension that extends into the first region. The second electrode layer is provided between the first electrode layer and the light emitting structure, and has a second electrode extension that extends into the second region. The interlayer insulating layer is provided between the first and second electrode layers, and has an opening exposing a portion of the first electrode extension. The pad electrode layer is provided on the interlayer insulating layer, and is connected to the portion of the first electrode extension through the opening.
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